Semiconductor Substrate Oxygen-Hydrogen Profile for Precise Donor Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing techniques for adjusting the donor concentration of semiconductor substrates lack the necessary accuracy, which can affect the performance and reliability of semiconductor apparatuses.
Innovation Solution
A semiconductor apparatus is designed with a semiconductor substrate containing oxygen, featuring a first peak of hydrogen chemical concentration on the lower surface side and a flat portion on the upper surface side with a hydrogen donor, ensuring a substantially flat donor concentration distribution in the depth direction. The oxygen contribution ratio and hydrogen donor concentration are carefully controlled within specific ranges to achieve precise donor concentration adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen implantation and diffusion is used to adjust substrate resistance, then the donor concentration can be modified, but the donor concentration cannot be adjusted with high accuracy
Solution Approach 1:
The invention changes the key parameter from simple hydrogen concentration to the ratio of oxygen contribution to total hydrogen donor concentration. By controlling the oxygen contribution ratio within a specific range (1×10^-5 to 7×10^-4), the invention enables precise adjustment of donor concentration that overcomes the limitations of conventional hydrogen implantation methods.
Solution Approach 2:
The invention introduces oxygen as an intermediary element to mediate the relationship between hydrogen implantation and donor concentration. Instead of directly controlling hydrogen concentration alone, the invention uses oxygen contribution as a mediating factor that provides finer control over the final donor concentration, achieving high precision adjustment.
2Quantity of substance
If hydrogen is implanted into semiconductor substrate, then donor concentration increases, but the distribution becomes non-uniform with peaks instead of flat profile
Solution Approach 1:
The invention applies local quality by creating different hydrogen concentration profiles in different regions. The flat portion is specifically engineered to have a substantially flat donor concentration distribution, while peak portions can have higher concentrations. This regional differentiation allows the flat portion to maintain uniformity while still achieving high overall donor concentration through the peaks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise adjustment of the donor concentration in semiconductor substrates, enhancing the accuracy and reliability of semiconductor apparatuses by optimizing the hydrogen donor distribution and oxygen contribution.
Implementation Method 1
there is known a technique of forming a donor by implanting hydrogen into a predetermined depth of a semiconductor substrate
Implementation Method 2
and diffusing the hydrogen to adjust substrate resistance
Data Source
AI summary
A semiconductor apparatus includes a flat portion disposed in a predetermined region containing a central depth position of a semiconductor substrate, between a fist peak disposed in an upper surface side of the semiconductor substrate and a second peak disposed in a lower surface side of the semiconductor substrate, and having a substantially flat concentration higher than a bulk donor concentration in a donor concentration distribution in a depth direction of a semiconductor substrate. The entire oxygen chemical concentration between the first peak and the second peak ranges from 3×1015 atoms/cm3 to 2×1018 atoms/cm3.