Semiconductor Substrate Doped Zones P-N Junction Insulation
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Solution Overview
Problem
Existing semiconductor substrates with P-N junctions face challenges in achieving high voltage electrical insulation without risking electrical breakdown, which can damage adjacent active components.
Innovation Solution
A semiconductor substrate design featuring doped zones with a specific doping concentration gradient, including a fourth doped zone with a higher concentration than the first and second zones, positioned between them, and extending towards the second zone without direct contact, enhances electrical insulation and prevents breakdown by optimizing dimensions using TCAD techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a P-N junction is formed with standard doped zones to achieve electrical insulation, then the device can be manufactured with conventional processes, but the maximum voltage applicable is limited due to risk of electrical breakdown
Solution Approach 1:
The patent modifies the doping concentration parameters by introducing a fourth doped zone with higher doping concentration than the first and second zones. This parameter change creates a more favorable electric field distribution that increases the breakdown voltage of the P-N junction, allowing higher voltage application without electrical breakdown.
Solution Approach 2:
The patent divides the doped region into multiple segments (first, second, third, and fourth doped zones) with different doping concentrations. The fourth zone is positioned between the first and second zones and extends toward the second zone without direct contact, creating a segmented structure that optimizes the electric field distribution and prevents breakdown.
2Reliability
If the distance between N-well and P-well is increased to prevent electrical breakdown, then the P-N junction can withstand higher voltages, but the device dimensions increase and compact geometry is lost
Solution Approach 1:
By changing the doping concentration parameter in the fourth zone to be higher than in the first and second zones, the patent achieves higher breakdown voltage without increasing the physical distance between wells. The optimized doping profile allows compact geometry while maintaining high voltage capability.
Solution Approach 2:
The fourth doped zone acts as an intermediary structure between the first and second zones. It mediates the electric field distribution in a compact space, enabling high voltage resistance without requiring increased separation distance between the N-well and P-well.
3Reliability
If a fourth doped zone with higher concentration is introduced to enhance voltage capability, then the P-N junction can receive higher voltages, but the doping profile complexity and manufacturing precision requirements increase
Solution Approach 1:
The patent introduces a fourth doped zone with specifically optimized doping concentration parameters - higher than the first and second zones but positioned to extend toward the second zone without direct contact. This parameter optimization achieves high voltage capability while the segmented structure allows independent control of each zone's doping profile.
Solution Approach 2:
By segmenting the doped regions into distinct zones with different doping concentrations, the patent enables independent optimization of each zone's manufacturing parameters. The fourth zone's specific positioning and concentration can be controlled separately, managing manufacturing complexity while achieving superior electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for higher voltage application while maintaining compact geometry, effectively preventing electrical breakdown and ensuring the integrity of active components near the P-N junction.
Implementation Method 1
doped zones forming a P-N junction
Implementation Method 2
the concentration in doping element of the third zone being lower than the concentration of doping element of the first zone and lower than the concentration of doping element of the second zone
Data Source
Figure 1~2
Figure 3
Figure 4~5
AI summary
The substrate (100) has four doped zones (1-4) forming a P-N junction (101), where the first doped zone is doped with N-type doping, and the second and third doped zones are doped with P-type doping. The third doped zone is located between the first doped zone and the second doped zone, where concentration of a doping element of the third zone is lower than concentration of doping elements of the first and second doped zones. Concentration of a doping element of the fourth zone is greater than the highest concentration of the doping element of the first zone. USE : Semiconductor substrate. ADVANTAGE : The substrate has four doped zones forming the P-N junction, and the doped zones of the substrate are formed from doped silicon material, thus ensuring better electrical insulation at high voltage, and reducing or preventing the electrical breakdown of the P-N junction from damaging the active components located close to that of the P-N junction. DESCRIPTION OF DRAWINGS : The drawing shows a partial vertical sectional view of a semiconductor substrate comprising a P-N junction. 1-4 : Doped zones 1a, 1b, 2a, 2b, 4a, 4b : Ends of doped zones 4A, 4B : Doped zone portions 100 : Semiconductor substrate 101 : P-N junction.