Semiconductor Substrate With Doping Gradient Blocks Leakage
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Solution Overview
Problem
Highly integrated semiconductor devices face challenges in reducing the interval between well regions, which leads to leakage paths and defects due to the increased width of well regions towards the base substrate, affecting the performance and productivity of semiconductor substrates.
Innovation Solution
A semiconductor substrate is designed with a base substrate, a first epitaxial layer, and a second epitaxial layer, where the doping concentration of the first epitaxial layer is higher than the second epitaxial layer, and the well regions extend deeper than the thickness of the second epitaxial layer, effectively blocking leakage paths between adjacent well regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the interval between well regions is reduced to achieve high integration, then device integration density is improved, but leakage paths form between adjacent well regions causing performance degradation
Solution Approach 1:
The patent applies local quality by creating a doping concentration gradient within the epitaxial layer - the doping concentration is higher near the well regions and decreases toward the base substrate. This localized variation in doping concentration specifically at the interface between well regions blocks leakage paths without requiring increased spacing between wells, thus resolving the contradiction between high integration density and leakage prevention
Solution Approach 2:
The patent changes the doping concentration parameter of the epitaxial layer to resolve the contradiction. By optimizing the doping concentration gradient (higher near wells, lower near base substrate), the patent enables closely spaced well regions to maintain electrical isolation, allowing high integration density while preventing leakage paths that would otherwise form at reduced intervals
2Reliability
If the doping concentration of the first epitaxial layer is increased to block leakage paths, then leakage prevention is improved, but manufacturing complexity increases due to precise doping control requirements
Solution Approach 1:
The patent applies preliminary action by pre-configuring the doping concentration gradient in the epitaxial layer before well region formation. The doping concentration is established higher near the well regions and lower near the base substrate in advance, which automatically blocks leakage paths when wells are formed at closely spaced intervals, without requiring complex real-time doping control during manufacturing
Solution Approach 2:
The patent resolves the contradiction by introducing a vertical dimension to the doping concentration profile. Instead of uniform doping, the doping concentration varies through the thickness of the epitaxial layer (higher near wells, lower near base substrate). This dimensional approach to doping control blocks leakage paths while using standard manufacturing processes, avoiding excessive complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the performance of semiconductor substrates by preventing leakage paths and improving productivity by controlling the thickness of the epitaxial layers to effectively block potential leakage between well regions, even with closely spaced intervals.
Implementation Method 1
a first epitaxial layer having a first conductivity type on the base substrate, a second epitaxial layer having the first conductivity type on the first epitaxial layer
Data Source
AI summary
A semiconductor substrate includes a base substrate, a first epitaxial layer having a first conductivity type on the base substrate, a second epitaxial layer having the first conductivity type on the first epitaxial layer, a first well region having a second conductivity type different from the first conductivity type, in the first epitaxial layer and the second epitaxial layer, and a second well region which is spaced apart from the first well region and has the second conductivity type, in the first epitaxial layer and the second epitaxial layer, wherein a doping concentration of the first epitaxial layer is greater than a doping concentration of the second epitaxial layer, and a depth of each of the first well region and the second well region is greater than a thickness of the second epitaxial layer.