Semiconductor Package Substrate With Edge Through Vias for Warpage Control
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Solution Overview
Problem
The miniaturization and lightweight trends in electronic components have made it challenging to control warpage in semiconductor package substrates, which requires improved rigidity and management of substrate thickness.
Innovation Solution
A semiconductor package design that incorporates through vias penetrating the substrate between the outermost connecting terminal and the outer peripheral surface, enhancing substrate rigidity by forming these vias along the substrate's edges and exterior, thereby controlling warpage and improving uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If the substrate thickness is reduced to achieve miniaturization and lightweight electronic components, then the size and weight of the semiconductor package are reduced, but the rigidity of the substrate deteriorates making warpage control more difficult
Solution Approach 1:
The substrate is segmented into multiple regions with different structures: a first region containing connecting terminals and a second region with through vias. This segmentation allows the through vias to be strategically placed in the second region to enhance rigidity without interfering with the electrical connections in the first region, thus maintaining strength while achieving miniaturization.
Solution Approach 2:
Different regions of the substrate are given different structural qualities. The second region contains through vias that extend through the entire thickness of the substrate, providing localized rigidity enhancement. This local quality approach allows the substrate to maintain overall lightweight design while having specific high-rigidity zones where needed for warpage control.
2Strength
If through vias are formed in the substrate to improve rigidity, then the rigidity and warpage control are improved, but the complexity of the substrate structure increases
Solution Approach 1:
The substrate structure is divided into distinct functional regions: a first region for electrical connections with connecting terminals, and a second region for mechanical reinforcement with through vias. This segmentation simplifies the design process by clearly defining where each type of feature should be placed, reducing overall structural complexity despite adding through vias.
Solution Approach 2:
Through vias are localized to specific regions (the second region) rather than being distributed uniformly throughout the substrate. This localized approach adds rigidity only where needed for warpage control, avoiding unnecessary structural complexity in regions where simple connecting terminals suffice.
3Strength
If through vias are formed penetrating the entire substrate, then the rigidity is significantly improved, but the manufacturing precision requirements increase due to the need to control via placement and depth
Solution Approach 1:
By dividing the substrate into a first region (with connecting terminals) and a second region (with through vias), the manufacturing process can be optimized for each region separately. The through vias are confined to the second region, allowing precise control of via placement without affecting the terminal formation in the first region, thus managing manufacturing precision requirements.
Solution Approach 2:
Through vias are formed with specific local qualities: they extend through the entire thickness of the substrate but are confined to the second region. This localized through-via structure provides maximum rigidity enhancement while allowing independent optimization of via dimensions and placement precision in the second region, separate from the terminal region.
Data Source
AI summary
A semiconductor package is provided. A semiconductor package includes a semiconductor package comprising a connecting structure in which a connecting terminal is placed in a lower part, and a semiconductor chip which is placed on the connecting structure and connected to the connecting structure, wherein the connecting structure includes a plurality of wiring layers placed to be stacked, a plurality of insulating layers between the wiring layers, and first and second passivation layers which each covers at least a part of an uppermost layer of the plurality of insulating layers and the wiring layer placed on the uppermost layer, and a through vias which penetrates the plurality of insulating layers, wherein the through via comes into contact with a lower surface of the first passivation layer and an upper surface of the second passivation layer.