Semiconductor Substrate With Hybrid Crystalline Orientations
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in optimizing carrier mobility, particularly in device isolation, epitaxial quality, and scalability, especially with hybrid-orientation technology, which requires innovative approaches compatible with existing VLSI technology without new materials.
Innovation Solution
A method involving a silicon-on-insulator structure is created by bonding a second silicon layer to a dielectric layer on a first silicon layer, with specific crystalline orientations, and then forming an epitaxial layer to enhance carrier mobility, allowing for the definition of regions and subsequent FinFET process integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hybrid-orientation technology is implemented to improve carrier mobility, then carrier mobility is improved, but device isolation quality deteriorates
Solution Approach 1:
The substrate is divided into multiple regions with different orientations: a first region with a first orientation and a second region with a second orientation. This segmentation allows different areas to serve different functions - one optimized for carrier mobility and another for device isolation quality.
Solution Approach 2:
Different regions of the substrate are assigned different crystalline orientations tailored to their specific functional requirements. The first region has orientation optimized for carrier mobility enhancement, while the second region has orientation optimized for device isolation quality, allowing each local area to have the quality needed for its specific purpose.
2Reliability
If hybrid-orientation structure is created to optimize carrier mobility, then carrier mobility is improved, but process integration complexity increases
Solution Approach 1:
The substrate is divided into multiple regions with different orientations: a first region with a first orientation and a second region with a second orientation. This segmentation allows different areas to serve different functions - one optimized for carrier mobility and another for device isolation quality.
Solution Approach 2:
Different regions of the substrate are assigned different crystalline orientations tailored to their specific functional requirements. The first region has orientation optimized for carrier mobility enhancement, while the second region has orientation optimized for device isolation quality, allowing each local area to have the quality needed for its specific purpose.
3Reliability
If multi-region substrate is fabricated to allow channel direction adjustment, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The substrate is divided into multiple regions with different orientations: a first region with a first orientation and a second region with a second orientation. This segmentation allows different areas to serve different functions - one optimized for carrier mobility and another for device isolation quality.
Solution Approach 2:
Different regions of the substrate are assigned different crystalline orientations tailored to their specific functional requirements. The first region has orientation optimized for carrier mobility enhancement, while the second region has orientation optimized for device isolation quality, allowing each local area to have the quality needed for its specific purpose.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method optimizes carrier mobility by maintaining consistent crystalline orientations across layers while allowing for channel direction adjustments, improving device performance and scalability within existing VLSI technology frameworks.
Implementation Method 1
bonding a second silicon layer to the dielectric layer
Implementation Method 2
forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation
Data Source
AI summary
A method for fabricating substrate of a semiconductor device includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation.


