Semiconductor Substrate Insulating Layer Step for Short Circuit Prevention
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Solution Overview
Problem
Existing semiconductor devices with active matrix substrates face challenges in suppressing short circuits between wires in the frame region due to the thickness and pattern of insulating films, which complicates the manufacturing process and reduces productivity.
Innovation Solution
A semiconductor device with a substrate featuring a first metal layer, an insulating layer, a second metal layer, and an insulative protection layer, where the surface of the insulating layer has a step between adjacent second wires, dividing any electrically-conductive residue and preventing short circuits, and an electrically-conductive layer is applied on the protection layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick insulating film is used to reduce parasitic capacitance and improve pixel aperture ratio, then electrical performance is improved, but manufacturing complexity increases due to resist residue formation and short circuit risks
Solution Approach 1:
The patent introduces a vertical dimension by forming a protruding portion that rises from the insulating film surface. This three-dimensional structure creates a physical barrier against resist residue formation without changing the horizontal pattern design, thus solving the manufacturing complexity issue while maintaining the electrical benefits of the thick insulating film
Solution Approach 2:
The protruding portion is formed in advance during the insulating film formation process, before the wire patterning step. This preliminary structural preparation prevents resist residue formation during subsequent manufacturing steps, eliminating the need for complex process adjustments or additional cleaning steps
2Reliability
If the insulating film pattern extends between wires in the frame region to suppress resist residue, then short circuit prevention is improved, but manufacturing precision requirements increase
Solution Approach 1:
Instead of extending the insulating film pattern horizontally between wires, the patent creates a vertical protruding portion at the insulating film edge. This vertical extension achieves the same short circuit prevention effect without requiring precise horizontal pattern control, thus reducing manufacturing precision requirements
3Reliability
If the insulating film edge is configured with a gentle slope to suppress resist residue, then short circuit prevention is improved, but device complexity increases due to additional process steps
Solution Approach 1:
The insulating film is segmented into two distinct regions: a flat base region and a vertical protruding portion. This segmentation creates a clear geometric discontinuity that prevents resist residue formation without requiring gentle slope configuration, thereby avoiding additional process steps for slope control
Data Source
AI summary
A semiconductor device (100T, 100B) includes: a substrate (30); a first metal layer (10) supported on the substrate (30), the first metal layer (10) including a plurality of first wires (12); an insulating layer (70) provided on the first metal layer (10); a second metal layer (20) provided on the insulating layer (70), the second metal layer (20) including a plurality of second wires (22); an insulative protection layer (80) covering part of each of the plurality of second wires (22), and an electrically-conductive layer (90) provided on the insulative protection layer (80). In a cross section including a boundary between a first region (R1) in which the insulative protection layer (80) is provided and a second region (R2) in which the insulative protection layer (80) is not provided, a surface of the insulating layer (70) which is on the insulative protection layer (80) side has a step between two of the second wires which adjoin each other.