Semiconductor Substrate Peeling Using Infrared Laser Heating
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is effectively peeling off one substrate from a joined pair without causing damage to the remaining structure or incurring high costs due to substrate disposal.
Innovation Solution
A method involving the use of infrared laser light to locally heat a film with higher absorptance, causing it to expand and weaken the joining force at the interface, allowing the substrate to be peeled off with minimal stress using a blade member, while reusing the peeled substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional peeling methods are used to separate joined substrates, then substrate separation is achieved, but substrate damage occurs and manufacturing costs increase due to disposal
Solution Approach 1:
The patent applies local quality by creating protrusions and recesses at specific locations on the substrate surface to form a mechanical interlocking structure. This localized structural modification enables controlled peeling at the interface between substrates while preserving the integrity of the substrates themselves, allowing one substrate to be reused without damage.
Solution Approach 2:
The patent segments the bonding interface by creating an array of discrete protrusions and corresponding recesses rather than a continuous bonding layer. This segmentation allows the peeling force to be distributed across multiple discrete points, enabling clean separation without damaging the substrates and facilitating substrate reuse.
2Ease of operation
If high peeling force is applied to separate substrates, then substrate separation is achieved, but thermal and mechanical damage occurs to the device structure
Solution Approach 1:
The patent uses local quality by concentrating the peeling action at specific protrusion-recess interface points rather than applying force across the entire substrate surface. This localized mechanical interlocking failure requires minimal force and prevents widespread thermal and mechanical damage to the device structure during the peeling process.
Solution Approach 2:
The patent applies preliminary action by pre-forming the protrusion and recess structures on the substrate before joining. These pre-formed features create a built-in mechanical interlocking mechanism that naturally facilitates low-force peeling, eliminating the need for high peeling forces that would cause damage to the device structure.
3Device complexity
If substrate peeling is not performed appropriately, then manufacturing complexity is reduced, but substrate damage occurs and waste increases
Solution Approach 1:
The patent applies local quality by forming protrusions and recesses only at the peeling interface region rather than modifying the entire substrate. This localized structural feature enables appropriate peeling with minimal process complexity while preventing substrate damage and waste, as the interlocking structure fails cleanly at the interface without affecting other areas of the substrate.
Solution Approach 2:
The patent implements discarding and recovering by designing the peeling interface to allow one substrate to be cleanly separated and reused. The protrusion-recess mechanical interlocking structure ensures that peeling can be performed appropriately to recover the substrate for reuse, thereby reducing substrate waste without requiring complex peeling processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs by enabling substrate reuse and minimizes thermal and mechanical damage to the device structure, improving yield and reducing waste.
Implementation Method 1
a fourth film (4) arranged on a side of the substrate (2) with the third film (5) being interposed therebetween, wherein a main surface on a side of the substrate (2) of the fourth film (4) has two-dimensionally-distributed protrusions or recesses, and absorptance of infrared light of the fourth film (4) is higher than absorptance of the infrared light of the third film (5)
Implementation Method 2
causing it to expand and weaken the joining force at the interface
Data Source
AI summary
A manufacturing method of a semiconductor device includes stacking a first film on a first substrate and stacking a third film and a second film on a second substrate; joining a main surface on an opposite side of the first substrate of the first film and a main surface on an opposite side of the second substrate of the second film; emitting infrared laser light from a side of the second substrate in such a manner that a focal point is placed in a vicinity of the second film; and peeling off the second substrate. Absorptance of the infrared laser light of the second film is higher than absorptance of the infrared laser light of the second substrate, and a thermal expansion coefficient of the third film is different from a thermal expansion coefficient of a film in contact with the third film.