3D Semiconductor Substrate Measurement via Multi-Angle Beam Reflection
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Solution Overview
Problem
Current methods for measuring the optical properties and thickness of nano-thin films in the semiconductor industry lack non-destructive, real-time, and precise techniques, especially for evaluating the 3D structure of semiconductor devices within a limited measurement region.
Innovation Solution
An apparatus that includes a beam irradiating unit, a rotating stage, and a detector system to generate 3D images of semiconductor substrates by irradiating and reflecting beams at different angles, allowing for non-destructive measurement of the 3D structure through the combination of 2D images obtained at various angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional measurement methods are used for nano-thin films, then measurement can be performed, but the measurement is destructive and lacks real-time capability
Solution Approach 1:
The patent replaces conventional mechanical contact measurement methods with a beam-based optical measurement system. A beam is irradiated onto the semiconductor substrate, and reflected beams are detected to obtain surface information, eliminating mechanical contact and enabling non-destructive, real-time measurement of nano-thin films and 3D structures.
2Measurement precision
If a single-angle beam reflection measurement is performed, then the measurement process is simple, but the 3D structure information is incomplete
Solution Approach 1:
The patent employs a dynamic measurement approach where the stage rotates to change the incident angle of the beam dynamically. By measuring reflected beams at multiple different angles during rotation, the system reconstructs complete 3D structure information, resolving the contradiction between measurement simplicity and 3D accuracy.
Solution Approach 2:
The patent transitions from 2D single-angle measurement to 3D multi-angle measurement by introducing the angular dimension. The stage rotation enables the beam to interact with the sample from multiple angular perspectives, allowing reconstruction of three-dimensional surface topography and structure information.
3Measurement precision
If the measurement region is limited to tens of μm×tens of μm, then surface focus is improved, but the evaluation coverage of fabrication processes is restricted
Solution Approach 1:
The patent divides the measurement process into multiple angular segments. By rotating the stage and performing measurements at different angles, the system effectively expands the evaluation coverage beyond the limited physical measurement region, allowing comprehensive assessment of fabrication processes across different areas through angular multiplexing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise, non-destructive, and real-time measurement of semiconductor device structures, improving the evaluation of physical properties and fabrication processes by generating accurate 3D images from multiple angles.
Implementation Method 1
a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle
Data Source
AI summary
An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector.