Semiconductor Substrate with Asymmetric Off-Angle for Defect Suppression
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Solution Overview
Problem
Integrated circuit devices manufactured using single crystal semiconductor substrates face challenges in suppressing crystal defects, which affect their performance and reliability due to the need for optimized transistor structures and surface characteristics.
Innovation Solution
A semiconductor substrate with a main surface inclined at a specific off-angle greater than 0° from a crystal plane, featuring a notch, is used to form a fin-type active region with atomic level steps, which minimizes crystal defects and improves surface characteristics, allowing for reduced heat treatment processes and enhanced manufacturing stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a single crystal semiconductor substrate is used to manufacture integrated circuit devices, then the transistor structure can be optimized for fast operation speed, but crystal defects and faults occur affecting reliability
Solution Approach 1:
The substrate surface is designed with an asymmetric off-angle inclination relative to the crystal plane, creating an asymmetric atomic arrangement that prevents crystal defect propagation while maintaining fast carrier transport properties necessary for high-speed operation
Solution Approach 2:
The off-angle is applied locally to specific crystal planes in the substrate structure, creating regions with different atomic arrangements that suppress defect formation in critical areas while preserving the overall single crystal properties needed for high-speed transistor operation
2Manufacturing precision
If the main surface is inclined by an off-angle from the crystal plane, then atomic level steps are formed improving surface characteristics, but the manufacturing process becomes more complex
Solution Approach 1:
The crystal plane orientation parameter is changed by introducing a specific off-angle inclination, which fundamentally alters the surface atomic structure to create self-forming atomic level steps, thereby achieving high manufacturing precision through parameter optimization rather than complex processing steps
Data Source
AI summary
A semiconductor substrate includes a main surface inclined by a first off-angle greater than 0° from a first direction parallel to a crystal plane, with respect to the crystal plane, in a first radial direction of the main surface, and a notch disposed toward the first direction, at an edge of the main surface in the first radial direction.