Semiconductor Substrate Plating for Terminal Height Uniformity
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Solution Overview
Problem
Conventional semiconductor device substrates face issues with non-uniform height of internal terminal surfaces, leading to potential tilting of semiconductor elements and conduction failures during electrical connections, and require additional processes for forming openings to uncover external terminal parts, which decreases productivity.
Innovation Solution
A semiconductor device substrate is designed with a plating layer configuration where the internal terminals are formed at predetermined sites on a metal plate, and the external terminals are formed with a higher surface height than the internal terminals, allowing for a resin layer to be applied without covering the external terminals, thereby eliminating the need for etching and opening formation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plating is performed from the metal plate side to form external terminal surface and internal terminal surface, then both surfaces can be formed, but the plating thickness varies causing non-uniform height of internal terminal surface
Solution Approach 1:
The plating process is segmented into two distinct stages: first plating the internal terminal surface from the metal plate side, then flipping the substrate to plate the external terminal surface from the opposite side. This segmentation allows each surface to be plated independently with controlled thickness, eliminating the height non-uniformity problem that would result from attempting to plate both surfaces simultaneously from one side.
2Quantity of substance
If plating thickness is about 30 μm, then sufficient plating coverage is achieved, but variety in height of 5 to 8 μm is generated causing tilt or conduction failure
Solution Approach 1:
The internal terminal surface is plated first with controlled thickness before the substrate is flipped for external terminal plating. This preliminary action ensures that the internal terminal surface achieves the required plating thickness and uniformity before any subsequent processing, preventing tilt and conduction failure in the final device assembly.
3Ease of manufacture
If resin is formed to cover the entire external connection surface, then complete coverage is achieved, but additional process of forming openings to uncover external terminal parts is required
Solution Approach 1:
The resin layer is designed with local quality variations: it covers the entire external connection surface except for predetermined regions where external terminal parts are exposed. This is achieved by controlling the resin application process or using a mask pattern, allowing complete coverage where needed while leaving terminal areas accessible for electrical connection, thereby eliminating the need for a separate opening formation process.
4Manufacturing precision
If additional processes of forming openings and uncovering external terminal parts are required, then complete terminal exposure is achieved, but productivity for semiconductor devices is decreased
Solution Approach 1:
The external terminal parts are preliminarily positioned and protected during resin application, or the resin is applied in a controlled manner to automatically expose the terminal areas. This preliminary arrangement of the resin layer eliminates the need for subsequent opening formation processes, maintaining precise terminal exposure while significantly improving manufacturing productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures a uniform height for internal terminal surfaces, prevents tilting and conduction failures, and simplifies the manufacturing process by eliminating the need for forming openings for external terminal parts, resulting in higher reliability and productivity.
Implementation Method 1
the metal plate is removed by dissolution by etching or the like
Implementation Method 2
there are formed by plating, from the metal-plate side, an external terminal surface having external terminal parts, on which formed by plating into the same shape is an intermediate layer, on which further formed by plating into the same shape is an internal terminal surface having internal terminal parts
Data Source
AI summary
A semiconductor device substrate and wiring member including a first noble metal plating layer to become internal terminals is formed at predetermined sites on a metal plate, a metal plating layer is formed on the first noble metal plating layer as having a same shape as the first noble metal plating layer, a second noble metal plating layer to become external terminals is formed on a part of the metal plating layer, and a height of a surface of the second noble metal plating layer from a surface of the metal plate is larger than a height of a surface of the first noble metal plating layer from the surface of the metal plate.