Semiconductor Substrate Processing Apparatus Film Uniformity

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in achieving uniform film quality, particularly in refractive index and thickness uniformity across the substrate, due to inadequate decomposition and distribution of precursor gases.

Innovation Solution

A technique involving a substrate processing apparatus where a precursor gas is decomposed in a nozzle and process chamber, with controlled internal pressures to generate an intermediate, which is then supplied to the substrate, ensuring a higher decomposition rate in the nozzle than in the chamber, promoting uniform film formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If precursor gas is supplied to the substrate in the process chamber for film formation, then film can be formed on the substrate, but the film quality uniformity in the plane of the substrate deteriorates due to inadequate decomposition and distribution of the precursor gas

Engineering Contradiction:

Improvefilm quality uniformityVSAvoidprecursor gas decomposition uniformity

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The precursor gas supply process is segmented into two distinct stages: first supplying the precursor gas to decompose in the process chamber, then supplying additional precursor gas to decompose in the shower head. This segmentation allows each decomposition stage to contribute differently to the overall film formation, improving uniformity by separating the decomposition locations and controlling their respective contributions independently

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The shower head acts as an intermediary component that not only distributes the precursor gas but also serves as a decomposition chamber. By introducing the shower head as an intermediate decomposition stage, the system achieves better control over precursor gas distribution and decomposition uniformity across the substrate surface

Inventive Principle:

Principle #24Intermediary (Mediator)

2Quantity of substance

If precursor gas decomposition is performed in the process chamber, then intermediate can be generated and supplied to the substrate, but the decomposition amount in the process chamber becomes insufficient to achieve uniform film quality

Engineering Contradiction:

Improveintermediate supply amountVSAvoidfilm thickness uniformity

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The intermediate generation process is divided into two sources: decomposition in the process chamber and decomposition in the shower head. This segmentation ensures that sufficient intermediate is generated overall while the shower head's decomposition contributes more uniformly distributed intermediate to the substrate, improving film thickness uniformity

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The decomposition process is extended from a single location (process chamber) to two distinct locations (process chamber and shower head). This spatial dimensionality change allows the system to achieve both sufficient intermediate quantity and uniform distribution by leveraging the different spatial characteristics of each decomposition location

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method improves in-plane refractive index and film thickness uniformity of the SiN film by ensuring even distribution of the intermediate across the substrate, resulting in a Si-rich film with excellent electrical characteristics and surface smoothness.

Implementation Method 1

an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber

Methodology Applied

Scientific EffectDecomposition: Pyrolysis

Implementation Method 2

forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS11170995B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Publication Date: 2021.11.09 KOKUSAI DENKI KK

AI summary

There is provided a technique that includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber, wherein in (a), an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber, the intermediate is supplied to the substrate, and a decomposition amount of the precursor gas in the first supplier is set larger than a decomposition amount of the precursor gas in the process chamber.