Multi-Layered Semiconductor Device Substrate Warpage Control
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Solution Overview
Problem
Conventional three-dimensional semiconductor package structures face issues with substrate warpage due to resin shrinkage stress, leading to coupling defects and reduced reliability in stacked semiconductor devices.
Innovation Solution
A multiple-layered semiconductor device structure where a first semiconductor package is stacked and coupled to a second package via electric conductors extending from the back surface of the second package to coupling lands on the substrate, with resin formed around the semiconductor device to prevent warpage, and openings in the resin allow for secure electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the substrate thickness is reduced to achieve smaller and thinner devices, then the device size is reduced, but the substrate stiffness decreases leading to warpage
Solution Approach 1:
The substrate is divided into a first substrate and a second substrate that are coupled together. This segmentation allows each substrate to be thinner while maintaining overall structural stability through their combined strength and the coupling mechanism between them.
Solution Approach 2:
The invention uses a composite structure consisting of multiple substrates coupled together with coupling lands and underfill resin. This composite approach provides enhanced mechanical strength and warpage resistance compared to a single thin substrate, while still enabling reduced overall device thickness.
2Reliability
If resin is formed on the substrate to protect the semiconductor device, then device protection is improved, but resin shrinkage stress causes substrate warpage
Solution Approach 1:
Dividing the substrate into multiple coupled substrates distributes the warpage stress caused by resin shrinkage, preventing excessive warpage in any single substrate while maintaining protective encapsulation.
Solution Approach 2:
The coupling structure between substrates acts as a counterbalancing mechanism that offsets the warpage-inducing shrinkage stress from the resin, maintaining substrate planarity despite the protective encapsulation.
3Length of stationary object
If the substrate stiffness is reduced to enable thinner design, then device thickness is reduced, but coupling reliability deteriorates due to warpage-induced defects
Solution Approach 1:
The segmented substrate structure with multiple coupled layers maintains coupling reliability by distributing mechanical stresses and preventing warpage-induced defects that would compromise bump junction integrity.
Solution Approach 2:
The composite substrate structure enhances mechanical strength and warpage resistance, ensuring reliable coupling between semiconductor devices while enabling thinner overall design.
Data Source
AI summary
In the multiple-layered semiconductor device and the method for manufacturing thereof according to the present invention, the resin is formed on the substrate around the semiconductor device, on which the semiconductor device is installed in the first semiconductor package. Therefore, a generation of a warpage of substrate is inhibited in the first semiconductor package. And since the first semiconductor package is stacked to and coupled to the second semiconductor package via the electric conductors that extend from the back surface of the second semiconductor package to the coupling lands on the substrate penetrating through the resin, a defective situation such as a coupling defective in the bump junction can be avoided when the junction of the second semiconductor package via the electric conductor is formed. Therefore, a considerably improved coupling reliability in the multiple-layered semiconductor device can be achieved.


