Semiconductor Substrate Separation via Ion Implantation Cavities
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for processing semiconductor substrates, such as grinding, are time-consuming and costly, and splitting methods often result in imprecise thickness and limited reuse possibilities, failing to efficiently separate semiconductor substrates while forming semiconductor devices.
Innovation Solution
A method involving ion implantation to create cavities that define a separation layer, followed by forming a semiconductor layer and device elements, and then separating the substrate along this layer using electromagnetic radiation or additional processes like heating and mechanical stress, allowing for precise control over substrate thickness and reduced material consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If grinding is used to reduce electrical resistance, then electrical resistance is reduced, but processing time increases and material consumption increases
Solution Approach 1:
The patent replaces the mechanical grinding process with ion implantation followed by selective separation. Instead of mechanically removing material to reduce resistance, ions are implanted to create a separation layer that enables precise splitting, thereby reducing both processing time and material loss while achieving the desired electrical properties
Solution Approach 2:
The patent changes the physical and chemical parameters of the semiconductor substrate through ion implantation. By implanting ions to create a separation layer with specific properties, the substrate undergoes parameter changes that enable subsequent selective separation, avoiding the need for time-consuming mechanical grinding
2Adaptability or versatility
If splitting is used to enable reuse, then reuse concepts are enabled, but thickness precision is reduced and some semiconductor processes are limited
Solution Approach 1:
The patent applies preliminary action by implanting ions to create a separation layer before the splitting process. This pre-prepared separation layer serves as a predefined separation path that ensures precise thickness control during subsequent splitting, thereby maintaining manufacturing precision while enabling reuse
Solution Approach 2:
The ion-implanted separation layer acts as an intermediary that facilitates precise separation. This intermediate structure provides a controlled interface for splitting, ensuring that the separation process achieves both the desired thickness precision and the reusability required for cost-effective manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient separation of semiconductor substrates into precise thickness parts, reducing material consumption and enabling reuse, while improving the control over the thickness and quality of the semiconductor substrate parts.
Implementation Method 1
forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate
Implementation Method 2
separating the semiconductor substrate along the separation layer into a first substrate part comprising the semiconductor layer and a second substrate part
Data Source
AI summary
Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.