Semiconductor Substrate Thickness Measurement via Scribe Region Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing semiconductor devices with back electrodes face challenges in accurately measuring the thickness of the semiconductor substrate after polishing, leading to fluctuations in electric properties and reliability due to the presence of insulating films in the thickness measurement process.
Innovation Solution
The method involves measuring the thickness of the semiconductor substrate in a region where the insulating films are not formed, specifically in the scribe region, using laser interferometry to ensure accurate thickness control and improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thickness measurement is performed in a region with insulating films, then the measurement process can be completed across the entire substrate surface, but the measurement precision deteriorates due to interference from the insulating films
Solution Approach 1:
The substrate surface is divided into two functional regions: a device region where insulating films are formed for normal device operation, and a scribe region where insulating films are omitted to enable accurate thickness measurement. This spatial segmentation allows simultaneous achievement of device functionality and measurement accuracy without mutual interference.
Solution Approach 2:
The scribe region acts as an intermediary measurement zone that does not participate in device operation but enables accurate thickness measurement. By performing measurements in this dedicated region free from insulating film interference, the patent achieves precise thickness control without compromising device performance.
2Manufacturing precision
If insulating films are formed in the scribe region, then the wiring structure is complete, but the thickness measurement accuracy deteriorates
Solution Approach 1:
The substrate is segmented into device regions requiring complete wiring structures with insulating films, and scribe regions where insulating films are intentionally omitted. This segmentation enables differentiated processing: complete wiring for device regions and simplified structure for measurement-oriented scribe regions.
Solution Approach 2:
Different regions of the substrate are given different structural qualities: device regions have full insulating film coverage for proper electrical isolation, while scribe regions have no insulating films to provide accurate optical measurement conditions. Each region's structure is optimized for its specific function.
3Productivity
If thickness measurement is performed over insulating films, then the entire substrate can be measured, but the measurement results are inaccurate due to film interference
Solution Approach 1:
The measurement function is spatially segmented from the device regions to dedicated scribe regions. While device regions maintain their complete insulating film structures for proper device operation, scribe regions provide open measurement zones where laser interferometry can accurately determine substrate thickness without film interference.
Solution Approach 2:
The insulating films are extracted or omitted from the scribe region specifically for measurement purposes. This selective removal creates a clear optical path for laser interferometry, enabling accurate thickness measurement while the device regions retain their complete insulating film structures for functional operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise thickness measurement and control of the semiconductor substrate, stabilizing the electric properties and enhancing the reliability of the semiconductor device by eliminating the influence of insulating films, thereby improving manufacturing yield and reducing manufacturing costs.
Implementation Method 1
measuring the thickness of the semiconductor substrate in the scribe region according to a laser interferometry
Data Source
AI summary
There is to provide a semiconductor device manufacturing method capable of improving reliability in a semiconductor device, including the following steps of: forming a semiconductor element on a semiconductor substrate, forming a wiring structure on the main surface of the semiconductor substrate, polishing the back surface of the semiconductor substrate, measuring the thickness of the semiconductor substrate, forming a back electrode on the back surface of the semiconductor substrate, and then cutting off the semiconductor substrate along the scribe region. In the step of measuring the thickness of the semiconductor substrate, it is measured in a portion where the main surface of the semiconductor substrate is bared without forming the insulating films included in the wiring structure.


