Semiconductor Substrate Treatment Using Silicon-Based Solution Exchange
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor substrate treatment is maintaining structural stability of pattern structures with high aspect ratios, as existing methods face difficulties in handling reduced critical dimensions, leading to potential collapse during washing processes due to capillary forces.
Innovation Solution
A method involving selective etching to form active and trench isolation regions, followed by replacing deionized water with a silicon-based solution and performing a heat treatment to form silicon oxide material, which fills trench isolation regions and prevents capillary forces from collapsing the active regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If deionized water is provided to wash the semiconductor substrate, then cleaning is achieved, but capillary forces cause pattern structures with high aspect ratios to collapse
Solution Approach 1:
A surfactant solution is introduced as an intermediary substance to replace deionized water in the washing process. The surfactant reduces surface tension and eliminates capillary forces that cause pattern structure collapse, while still achieving effective cleaning of the semiconductor substrate
Solution Approach 2:
The surface tension parameter of the washing liquid is changed by using a surfactant solution instead of pure deionized water. This parameter change eliminates the capillary forces responsible for pattern structure collapse while maintaining cleaning effectiveness
2Productivity
If critical dimensions of electrical devices are reduced to continue development, then device density increases, but treatment difficulty increases and structural stability decreases
Solution Approach 1:
The surfactant solution acts as a mediator that enables effective treatment of structures with reduced critical dimensions by eliminating capillary forces, thus allowing continued scaling while maintaining treatment feasibility and structural stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the structural stability of pattern structures by filling trench isolation regions with silicon oxide material, preventing collapse and facilitating the formation of a device isolation layer, thereby supporting active regions and maintaining electrical isolation.
Implementation Method 1
A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate
Implementation Method 2
The provided deionized water is disposed on the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution
Data Source
AI summary
In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution. A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate. The silicon oxide material fills the trench isolation regions.