Semiconductor Light-Emitting Element Substrate Warpage Control
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Solution Overview
Problem
The use of substrates made of materials different from the compound semiconductor layer in semiconductor light-emitting elements leads to warpage due to thermal expansion differences, resulting in increased wavelength distribution and defective products, especially as substrate diameter increases.
Innovation Solution
A method for manufacturing semiconductor light-emitting elements with a group III compound semiconductor layer, where the substrate warpage is controlled within specific ranges, and an intermediate layer is formed using a sputtering method between the substrate and the semiconductor layer, ensuring the substrate diameter and thickness satisfy a particular ratio, and the semiconductor layer is formed using a metalorganic chemical vapor deposition method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a substrate made of a material different from the compound semiconductor is used, then the semiconductor layer can be formed on the substrate, but warpage occurs due to thermal expansion difference
Solution Approach 1:
The patent controls the warpage amount H of the substrate within a specific range (±30 μm or less) before forming the semiconductor layer. By establishing a quantitative parameter threshold for substrate warpage, the invention enables the use of diverse substrate materials while maintaining sufficient flatness to prevent excessive wavelength distribution in the final product.
2Productivity
If the substrate diameter increases, then the productivity and output size increase, but the wavelength distribution becomes larger due to more pronounced warpage
Solution Approach 1:
The patent establishes a specific relationship between substrate diameter D, thickness d, and warpage amount H, expressed as 0.7×10² ≤ (D/d) ≤ 1.5×10² with H ≤ ±30 μm. This parameter relationship allows larger substrate diameters to be used while maintaining acceptable wavelength distribution by controlling the warpage relative to the substrate dimensions.
3Ease of manufacture
If the semiconductor layer is formed with internal stress due to processing conditions, then the semiconductor layer can be created, but the substrate warpage increases
Solution Approach 1:
The patent measures and controls the substrate warpage amount H before forming the semiconductor layer, establishing a baseline flatness requirement. By performing this preliminary control, the invention accounts for initial warpage that will be exacerbated by subsequent semiconductor layer formation processes, ensuring the final product meets wavelength distribution specifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the wavelength distribution of the emission wavelength to less than 6 nm, improving the yield and stability of semiconductor light-emitting elements by minimizing the effects of warpage and processing variations.
Implementation Method 1
an intermediate layer forming step to form an intermediate layer between the substrate and the group III compound semiconductor layer by a sputtering method
Implementation Method 2
the group III compound semiconductor layer is formed on the substrate by a metalorganic chemical vapor deposition method
Implementation Method 3
a warpage occurs in the substrate due to a difference in a coefficient of thermal expansion between the substrate and the compound semiconductor
Data Source
AI summary
Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 μm is formed on a substrate (11) having a diameter D, a thickness and an amount of warpage H within the range of ±30 μm. The method is also characterized in that the diameter D and the thickness d of the substrate (11) satisfy the following formula (1):0.7×102≦(D/d)≦1.5×102 (1).