Semiconductor Substrate Layout With Redundant Wire Bond Paths
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Solution Overview
Problem
Existing semiconductor arrangements face reliability issues due to the failure of wiring elements during operation, which can lead to reduced performance and lifespan of the semiconductor module.
Innovation Solution
A semiconductor arrangement with a first substrate having electrically isolated line sections, where the first semiconductor element and a second substrate are connected to a first line section, and the second substrate has a metallization that is electrically isolated from the first substrate via a dielectric material, with wiring elements connecting the contact area of the semiconductor element to both substrate metallizations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring elements are used to connect the semiconductor element to substrate metallization, then electrical connection is achieved, but reliability deteriorates due to wiring element detachment under load
Solution Approach 1:
The patent divides the connection path into multiple segments: the wiring element connects to both the first substrate metallization and the second substrate metallization, creating redundant connection paths. This segmentation allows the system to maintain electrical connection even if one connection point fails, directly addressing the reliability issue of wiring element detachment.
Solution Approach 2:
The patent implements beforehand cushioning by creating a redundant connection structure where the wiring element is connected to both substrates. This redundant connection acts as a protective measure that cushions against the harmful effect of wiring element detachment, ensuring that failure of one connection does not lead to complete system failure.
2Reliability
If a single substrate metallization is used, then device complexity is reduced, but reliability deteriorates due to lack of redundant connection paths
Solution Approach 1:
The patent segments the metallization function across two separate substrates. The first substrate metallization and second substrate metallization are electrically isolated from each other, creating distinct connection zones. This segmentation enables redundant connection paths without requiring a single complex metallization structure, thus improving reliability while managing complexity through functional separation.
Solution Approach 2:
The wiring element acts as an intermediary that bridges both substrate metallizations. By connecting to both the first and second substrate metallizations, the wiring element creates redundant connection paths. The electrically isolated substrates serve as mediators that provide separate connection points, enabling reliability improvement without requiring direct electrical connection between substrates.
3Reliability
If wiring elements are made more robust to prevent detachment, then reliability improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
Instead of making a single wiring element more robust, the patent segments the connection function across two substrates. The wiring element maintains its standard structure but gains redundancy by connecting to both first and second substrate metallizations. This approach improves reliability through structural redundancy rather than through increased robustness of individual components, avoiding the complexity penalty.
Data Source
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AI summary
The invention relates to a semiconductor arrangement (2) comprising a first semiconductor element (4), a first substrate (6), a second substrate (20), and at least one wiring element (26). To achieve improved reliability, it is proposed that the first substrate (6) has a first substrate metallization (14) with electrically insulated conductor sections (12, 16), wherein the first semiconductor element (4) and the second substrate (20) are connected, in particular by a metallurgical bond, to a first conductor section (12) of the first substrate metallization (14), wherein the second substrate (20) has a second substrate metallization (22) on a side facing away from the first substrate (6), which is electrically insulated from the first conductor section (12) of the first substrate metallization (14) by means of a second dielectric material layer (24).wherein the first semiconductor element (4) has a contact surface (8) on a side facing away from the first substrate (6), wherein the contact surface (8) is connected to at least one wiring element (26), wherein the at least one wiring element (26) comprises a first connection section (28) which connects the contact surface (8) to a second conductor section (16) of the first substrate metallization (14) which is electrically insulated from the first conductor section (12), and a second connection section (30) which connects the contact surface (8) to the second substrate metallization (22) of the second substrate (20).