Semiconductor Subsurface Structure Measurement via Multi-Focal SEM Imaging

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Solution Overview

Problem

Scanning electron microscopes struggle to provide clear images of structures below the surface layer of semiconductor devices, leading to blurred images and high failure rates in property measurements due to physical limitations in electron transmission.

Innovation Solution

A method involving obtaining and adjusting SEM images of both surface and subsurface layers, generating a combined image to enhance contrast, identifying and calculating offsets between structures, and calculating sub-offsets to improve measurement accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If scanning electron microscope is used to measure structures in fine scale, then measurement precision is improved, but image clarity of subsurface structures deteriorates due to electron transmission limitations

Engineering Contradiction:
Improvemeasurement precisionVSAvoidimage quality
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent divides the measurement process into multiple focal plane acquisitions, capturing images at different depths (surface layer and subsurface layers separately). Each image is processed and aligned independently, then combined to produce a composite image that preserves clarity from multiple focal planes, resolving the contradiction between fine-scale measurement and subsurface image quality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces the dimension of focal plane depth by acquiring images at multiple focal distances. Instead of attempting to capture all layers in a single focal plane, the system measures structures across the depth dimension, acquiring sharp images of both surface and subsurface structures at different focal planes and combining them computationally.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If multiple images are combined to enhance subsurface structure clarity, then image quality is improved, but processing complexity increases

Engineering Contradiction:
Improveimage qualityVSAvoidprocessing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent creates multiple copies of the same physical structure imaged at different focal planes. Each focal plane produces a copy of the structure at different depth focus, and these copies are computationally aligned and combined. This copying approach simplifies the combination process by treating each focal plane image as a separate dataset that can be independently processed and then merged.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent introduces computational alignment and registration as intermediary processes between raw image acquisition and final composite image generation. These intermediary steps automatically align images from different focal planes based on feature matching, reducing the complexity of manual image combination while maintaining high image quality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the clarity of subsurface structures in SEM images, reducing measurement failure rates and enabling more accurate analysis of semiconductor devices.

Implementation Method 1

the scanning electron microscope is utilized to measure structures of semiconductor devices in a fine scale through the transmission of electrons

Methodology Applied
Scientific EffectElectron transmission: Electron Beam

Data Source

PatentUS11830176B2Method of measuring a semiconductor device
Publication Date: 2023.11.28 NAN YA TECH
  • US11830176B2 patent drawing
  • US11830176B2 patent drawing
  • US11830176B2 patent drawing

AI summary

The present disclosure provides a method of measuring a semiconductor device, including the following operations: obtaining a first image corresponding to a first layer in the semiconductor device; obtaining a second image corresponding to a second layer, below the first layer, in the semiconductor device, wherein the first layer includes at least one first structure and the second layer includes a plurality of second structures that are overlapped by the at least one first structure; generating a third image by combining the first image and the second image; and calculating an offset between the at least one first structure and the plurality of second structures based on the first image and the third image.