Semiconductor Support Asymmetric Groove Gas Discharge

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Solution Overview

Problem

Conventional semiconductor device production methods often result in voids in the bonding material between the semiconductor component and the mounting member due to insufficient removal of gases like volatile flux compounds, leading to reduced heat dissipation and reliability.

Innovation Solution

A semiconductor component support with a metal part featuring symmetrical pairs of openings, where one section is wider than the other, facilitating gas discharge and ensuring proper alignment and positioning of the semiconductor component during bonding, thereby preventing voids and enhancing the connection area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If a straight groove with constant width is used, then gas can be discharged from the bonding material, but the semiconductor component experiences positional deviation or inclination

Engineering Contradiction:
Improvegas accumulation in bonding materialVSAvoidpositioning accuracy of semiconductor component
Core Design Contradiction:
Object-generated harmful factorsVSManufacturing precision

Solution Approach 1:

The groove is designed with asymmetric width variation, where the first section has a first width and the second section has a second width different from the first width. This asymmetric design allows the groove to effectively discharge gas while providing positioning surfaces that prevent semiconductor component deviation, resolving the contradiction between gas discharge capability and positioning accuracy

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

Different sections of the groove have different widths tailored to specific functions: the first section is optimized for gas discharge while the second section is optimized for positioning the semiconductor component. This local differentiation allows each section to perform its specific function effectively, simultaneously achieving both gas discharge and precise positioning

Inventive Principle:
Principle #3Local quality

2Reliability

If bonding material is applied on the component-mounting portion, then the semiconductor component can be mounted, but voids appear in the bonding material due to trapped gas

Engineering Contradiction:
Improveconnection quality between semiconductor component and mounting memberVSAvoidvoids in bonding material
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The groove structure extracts gas from the bonding material by providing a dedicated discharge path. The groove extends from the surface to extract trapped gas bubbles during the bonding process, preventing void formation and ensuring reliable connection quality

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The groove is pre-formed in the mounting member before bonding occurs, creating an advance gas escape route. This preliminary structure ensures that when bonding material is applied and heated, gas can be immediately discharged through the pre-positioned groove, preventing void formation

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentEP2688095B1Semiconductor component support and semiconductor device
Publication Date: 2020.04.22 NICHIA CORP
  • EP2688095B1 patent drawingFigure 1A~1B
  • EP2688095B1 patent drawingFigure 2A~2B
  • EP2688095B1 patent drawingFigure 3A~3B

AI summary

A semiconductor component support (20) is provided which includes a metal component support portion (31) for a semiconductor component (10) to be mounted on the semiconductor component support portion. The component support portion (31) includes a metal part (37) that includes an opening (35) in plan view. The opening of the metal part (37) includes a first section (351), and a second section (352). The second section (352) communicates with the first section (351), and is arranged outside the first section (351). The second section (352) is wider than the first section (351). The first section (351) can be at least partially positioned directly under a mount-side main surface of the semiconductor component (10).