Semiconductor Device Support Layer for DRAM Electrode Stability
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing the size of elements while maintaining reliability and improving performance, particularly in dynamic random access memory (DRAM) cell capacitors, where the size reduction leads to instability and defects in the electrodes.
Innovation Solution
A semiconductor device structure is introduced, featuring a support layer with a first portion covering the upper surface of the interlayer insulating layer and a second portion extending horizontally to surround the contact structure and electrodes, along with a dielectric and a second electrode, to enhance stability and prevent electrode deformation or collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of elements is reduced to improve integration density, then productivity increases, but reliability deteriorates due to electrode instability and defects
Solution Approach 1:
A support layer is introduced as an intermediary structure between the substrate and the electrode. This support layer provides mechanical reinforcement to the electrode, preventing deformation and defects that occur when electrode size is reduced. The support layer acts as a mediator that enables small electrode dimensions while maintaining structural integrity and reliability.
Solution Approach 2:
The support layer is divided into two distinct portions: a first portion that contacts the substrate and provides broad mechanical support, and a second portion that directly supports the electrode. This segmentation allows each portion to perform its specific function optimally - the first portion provides foundational support while the second portion provides localized electrode support, enabling reliable small-scale electrodes.
2Area of stationary object
If the size of electrodes is reduced to improve device miniaturization, then area decreases, but manufacturing precision deteriorates due to electrode deformation and collapse
Solution Approach 1:
The support layer serves as a mechanical intermediary that prevents electrode collapse during manufacturing processes. By providing this underlying support structure, the electrode can be formed with high precision even at reduced dimensions, as the support layer prevents deformation that would otherwise occur during electrode formation and subsequent processing steps.
3Reliability
If a support layer is added to improve electrode stability, then reliability improves, but device complexity increases
Solution Approach 1:
The support layer is segmented into two functional portions with distinct roles. The first portion provides foundational mechanical support and can be integrated with existing substrate structures, while the second portion provides localized electrode support. This segmentation allows the support function to be distributed across different structural levels, reducing the complexity burden on any single layer while maintaining overall reliability.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced apart from the upper interlayer insulating layer is disposed on the substrate. A contact structure penetrating the upper interlayer insulating layer is disposed on the substrate. An upper support layer having a first portion covering an upper surface of the upper interlayer insulating layer, to surround an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and surrounding an upper side surface of the first electrode, is disposed. A dielectric conformally covering the first electrode and a second electrode on the dielectric are disposed.