Semiconductor Support Pattern With Segmented Holes

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Solution Overview

Problem

The challenge in semiconductor device fabrication is to reduce manufacturing costs while maintaining reliability, particularly in forming fine patterns with new integration techniques, where existing methods are costly and inefficient.

Innovation Solution

The semiconductor device incorporates a support pattern with varying sized support holes and a method of fabricating vertical structures in a honeycomb shape, using a combination of mask layers and etching processes to form triangular and circular support holes that contact the sidewalls of bottom electrodes, reducing the need for expensive exposure techniques and improving structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If new exposure techniques are used for forming fine patterns, then manufacturing precision is improved, but manufacturing cost increases

Engineering Contradiction:

Improvepattern formation precisionVSAvoidmanufacturing cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The support pattern is divided into multiple segments with different hole configurations (first support holes with circular inner sidewalls, second support holes with triangular inner sidewalls) to provide differentiated support for different vertical structures, enabling precise pattern formation through segmented support rather than requiring expensive new exposure techniques

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The support pattern is formed in advance before the main device fabrication process, providing pre-established support structures that guide subsequent pattern formation. The mold layer and support layer are prepared beforehand with specific hole patterns, allowing standard exposure techniques to achieve fine pattern precision

Inventive Principle:

Principle #10Preliminary action

2Productivity

If line widths are reduced for high integration, then device functionality is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improveintegration densityVSAvoidline width control

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

Different regions of the support pattern provide different types of support: first support holes with circular symmetry for certain vertical structures, and second support holes with triangular symmetry for other vertical structures. This local differentiation of support characteristics enables precise control of line widths and pattern dimensions without requiring excessive manufacturing precision

Inventive Principle:

Principle #3Local quality

3Reliability

If support pattern with varying hole sizes is used, then structural integrity is improved, but device complexity increases

Engineering Contradiction:

Improvestructural integrityVSAvoidsupport pattern complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The support pattern incorporates asymmetric hole configurations - first support holes with circular cross-section and second support holes with triangular cross-section - to provide optimized structural support for different vertical structures. This asymmetric design improves structural integrity while maintaining manageable complexity through systematic differentiation rather than random variation

Inventive Principle:

Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces manufacturing costs and enhances the reliability of semiconductor devices by using a cost-effective photolithography method and isotropic etching, ensuring uniform etching and regular thickness of dielectric and top electrodes, while maintaining the structural integrity of the support pattern.

Implementation Method 1

using the first mask pattern as an etching mask, by etching the support layer

Methodology Applied

Scientific EffectIsotropic etching:

Data Source

PatentUS11348996B2Semiconductor devices including support pattern and methods of fabricating the same

Publication Date: 2022.05.31 SAMSUNG ELECTRONICS CO LTD

AI summary

Disclosed are semiconductor devices including support patterns and methods of fabricating the same. The semiconductor devices may include a plurality of vertical structures on a substrate and a support pattern that contacts sidewalls of the plurality of vertical structures. The support pattern may include a plurality of support holes extending through the support pattern. The plurality of support holes may include a first support hole and a second support hole that are spaced apart from each other, and the first support hole may have a shape or size different from a shape or size of the second support hole.