Semiconductor Support Patterns with Asymmetric Holes
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration with reduced line widths due to the need for new and expensive exposure techniques, and existing methods can distort pattern shapes during photolithography and etching processes.
Innovation Solution
A semiconductor device design featuring pillar structures on a substrate with a support pattern that includes support holes of different shapes, which connect the pillars and expose their side surfaces, allowing for uniform etching conditions without extending into a dummy cell region, thus preventing pattern distortion and enabling high integration without requiring horizontal width extension into peripheral circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If line widths of patterns are reduced for high integration, then integration density is improved, but new and expensive exposure techniques are required
Solution Approach 1:
The support pattern is divided into multiple support holes with different shapes (first support holes and second support holes) rather than using a single uniform structure. This segmentation allows each hole type to serve specific functions in maintaining etching uniformity across different regions of the cell region, enabling reduced line widths without requiring expensive exposure techniques.
Solution Approach 2:
Different regions of the cell region are provided with different support hole shapes - first support holes in certain areas and second support holes in other areas. This local differentiation ensures that etching conditions are optimized for each specific region, maintaining uniform thickness of dielectric and electrode layers while allowing overall high integration with reduced line widths.
2Ease of manufacture
If conventional support patterns are used, then manufacturing is simple, but pattern shapes are distorted during photolithography and etching processes
Solution Approach 1:
The support pattern employs asymmetric hole shapes - first support holes with one shape and second support holes with a different shape - rather than using symmetric uniform holes. This asymmetric design compensates for distortion effects that occur during photolithography and etching, maintaining accurate pattern shapes while remaining manufacturable through standard processes.
3Reliability
If support pattern extends into dummy cell region, then pattern distortion is prevented, but horizontal width extension into peripheral circuits occurs
Solution Approach 1:
Different shaped support holes are strategically positioned within the cell region boundaries - first support holes in certain locations and second support holes in other locations - to provide localized support that prevents pattern distortion without requiring the support pattern to extend into the dummy cell region or peripheral circuit areas.
Data Source
AI summary
A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.