Semiconductor Structure With Staggered Support to Prevent Substrate Cracking
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Solution Overview
Problem
In semiconductor epitaxial growth, differences in lattice constant and thermal expansion coefficient between substrate and epitaxial materials lead to substrate deformation, stress, and cracking, while existing methods to reduce stress either compromise crystal quality or increase production costs.
Innovation Solution
A semiconductor structure with a support structure and a growth substrate where the gravity centers are staggered, and the support structure is larger and has a higher hardness than the growth substrate, with dielectric layers to prevent defect propagation and distribute centrifugal forces, enhancing mechanical strength and crystal quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If the rotational speed of the graphite disk is reduced to reduce centrifugal force, then the stress on the substrate is reduced, but the growth rate is reduced and pre-reaction particles are increased, deteriorating the morphology of the epitaxial layer
Solution Approach 1:
The support structure is designed with an asymmetric configuration where the gravity center is deliberately staggered relative to the growth substrate. This asymmetric design creates an offset that reduces the direct transmission of centrifugal force while maintaining adequate support, allowing the system to withstand rotational stress without requiring reduced rotational speed
Solution Approach 2:
The support structure is pre-configured with a staggered gravity center before the epitaxial growth process begins. This preliminary structural arrangement prepares the system to naturally distribute and reduce centrifugal stress during rotation, preventing the need to lower rotational speed and thereby maintaining growth rate and morphology quality
2Stress or pressure
If a bearing groove of the graphite disk is designed to reduce stress, then the stress on the substrate and graphite disk is reduced, but different shapes are required for different substrates, increasing research and development costs and reducing universality
Solution Approach 1:
The support structure with a staggered gravity center serves multiple functions: it provides mechanical support, distributes centrifugal stress, and maintains substrate positioning. This universal design can be applied to different substrate types without requiring custom groove shapes, thereby maintaining versatility while reducing stress
Solution Approach 2:
The stress reduction function is extracted from the graphite disk bearing groove design and transferred to the support structure. By placing the stress-mitigating feature in the support structure rather than the graphite disk, the solution becomes independent of substrate-specific groove designs, enhancing universality
3Device complexity
If the support structure and growth substrate gravity centers are aligned, then the structure is simpler, but the growth substrate directly contacts the graphite disk, causing deformation and cracking under centrifugal force
Solution Approach 1:
The gravity centers of the support structure and growth substrate are deliberately misaligned in an asymmetric configuration. This offset creates a geometric arrangement where the growth substrate is supported without direct contact with the rotating graphite disk, reducing centrifugal stress and preventing deformation and cracking while maintaining structural integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves mechanical strength, reduces cracking, and maintains crystal quality by distributing centrifugal forces and preventing defect propagation, thereby enhancing the stability and performance of the epitaxial layer.
Implementation Method 1
a gravity center of the support structure and a gravity center of the growth substrate are disposed in a staggered manner... transferring a centrifugal force on the growth substrate exerted by the graphite disk to the support structure
Implementation Method 2
a support structure is formed at the bottom of a growth substrate, so that a mechanical strength of the semiconductor structure can be effectively improved, a stability can be enhanced, and a probability of fragmentation can be reduced by suppressing deformation
Implementation Method 3
a first dielectric layer is disposed between the support structure and the growth substrate, so that defects in the support structure can be effectively prevented from extending upwards into the growth substrate
Data Source
AI summary
Disclosed is a semiconductor structure. The semiconductor structure includes a support structure, and a first dielectric layer and a growth substrate sequentially formed on the support structure, where a gravity center of the support structure and a gravity center of the growth substrate are disposed in a staggered manner, so that the direct contact between the growth substrate and the graphite disk can be avoided, a centrifugal force on the growth substrate exerted by the graphite disk to the support structure can be transferred, thereby further ensuring a quality of the growth substrate, and significantly reducing a probability of cracking to ensure a crystal quality of a subsequent epitaxial layer. The support structure is formed at the bottom of the growth substrate, so that a mechanical strength of the semiconductor structure can be effectively improved, a stability can be enhanced, and a deformation of the semiconductor structure can be suppressed.