3D Semiconductor Stack Support Layout for Stable Contact Plugs
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Solution Overview
Problem
There is a need for semiconductor devices with enhanced reliability and integration to increase data storage capacity, particularly in electronic systems that require high-capacity data storage, where existing two-dimensional memory cell arrangements are insufficient.
Innovation Solution
A semiconductor device design featuring a substrate with a stacked structure of conductive patterns, inner and outer supporters, contact plugs, and insulating spacers, which allows for vertical channels and increased contact plug diameters, enabling improved electrical connectivity and structural support within the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If two-dimensional memory cell arrangements are used, then device complexity is low, but data storage capacity per unit area is insufficient
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional stacked structure with vertical channels extending through multiple conductive patterns, thereby increasing data storage capacity per unit area by utilizing the vertical dimension
2Reliability
If contact plug diameter is increased to improve electrical connectivity, then electrical characteristics improve, but structural stability during heat treatment deteriorates
Solution Approach 1:
The patent divides the support structure into multiple segments including inner supporters positioned within contact plugs and outer supporters positioned at peripheral regions, providing distributed structural support that maintains stability while allowing adequate contact plug dimensions for electrical connectivity
Solution Approach 2:
The patent applies different support structures at different locations: inner supporters are positioned specifically within or adjacent to contact plugs to provide localized support where needed, while outer supporters are positioned at peripheral regions to provide overall structural stability during heat treatment processes
3Quantity of substance
If vertical channels are added to increase storage capacity, then data storage capacity increases, but device complexity increases
Solution Approach 1:
The patent implements vertical channels that extend in the thickness direction through multiple conductive patterns stacked on the substrate, enabling three-dimensional data storage architecture that increases storage capacity by utilizing the vertical dimension rather than expanding horizontally
Data Source
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Figure 2A
AI summary
A semiconductor device and an electronic system are provided. The semiconductor device may include a substrate including a cell array region and a connection region, a stacked structure including conductive patterns stacked on the substrate, an inner supporter that extends into the stacked structure in the connection region, a contact plug that extends into a portion of the stacked structure and electrically connected to one of the conductive patterns and at least partially extends around the inner supporter in plan view, an insulating spacer between the contact plug and the stacked structure and at least partially extends around the contact plug, and outer supporters spaced apart from the contact plug in the connection region and extending into the stacked structure.