Semiconductor Supporter Structure for Low-Leakage Through Electrodes
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Solution Overview
Problem
Highly integrated semiconductor devices experience increased leakage current due to the stacked structure of insulation and wiring layers, leading to defective characteristics.
Innovation Solution
The semiconductor device design includes a substrate with a cell region and a connection region, featuring a supporter with different portions in each region, buried insulation layers, and a stacked structure of insulation and wiring layers, which reduces leakage current by optimizing the connection and insulation between layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a stacked structure of insulation layers and wiring layers is formed on the source line, then integration density is improved, but leakage current increases
Solution Approach 1:
A supporter structure is introduced as an intermediary element between the source line and the stacked structure. The supporter includes a first portion on the source line, a second portion extending to the stacked structure, and a third portion connecting them. This intermediary structure provides physical support while enabling proper insulation and connection, thereby maintaining high integration density while reducing leakage current through optimized electrical isolation.
Solution Approach 2:
The supporter is divided into multiple portions (first, second, and third portions) with different functions and positions. The first portion is on the source line, the second portion extends to the stacked structure, and the third portion connects them. This segmentation allows each portion to be optimized for its specific function, enabling the structure to achieve both high integration density and low leakage current by addressing different requirements in different regions.
2Adaptability or versatility
If insulation layers and wiring layers are alternately stacked, then device functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The supporter structure is formed before the stacked structure is constructed. By establishing the supporter framework in advance, subsequent formation of insulation layers and wiring layers can proceed more systematically. The supporter serves as a pre-established guide and support structure, making the complex stacking process more manageable and reducing overall manufacturing complexity while maintaining full device functionality.
Data Source
AI summary
A semiconductor device includes a substrate including a cell region and a connection region. The connection region includes a plurality of pad regions and a through electrode region. A horizontal conductive layer is on the substrate. A supporter is on the horizontal conductive layer. The supporter includes a first portion in the cell region, a second portion in the plurality of pad regions, and a third portion in the through electrode region. A connection conductive layer is between the first portion and the horizontal conductive layer. A connection mold layer is between the third portion and the horizontal conductive layer. A first buried insulation layer passing through the third portion, the connection mold layer, and the horizontal conductive layer is provided. A stacked structure is on the substrate. A through electrode passing through the first buried insulation layer is provided.