Semiconductor Supporting Structure for Bonding Pad Stability
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Solution Overview
Problem
Low-k dielectrics in semiconductor elements have low mechanical stability and elasticity, making them prone to damage during the bonding process due to mechanical loadings, which can result in failure of the integrated circuit.
Innovation Solution
A supporting structure comprising multiple substructures is formed under partial regions of the bonding pad, using interconnect sections connected by supporting vias, allowing for localized mechanical support without covering the entire bonding pad, and utilizing a high-modulus dielectric layer above to enhance stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If low-k dielectric materials are used to reduce RC times in interconnect sections, then signal transmission performance is improved, but mechanical stability and modulus of elasticity deteriorate, making the materials prone to damage during bonding processes
Solution Approach 1:
The patent combines low-k dielectric materials with supporting structures made of materials having higher mechanical stability. This composite approach allows the low-k material to provide low RC times while the supporting structure compensates for the mechanical weakness, resolving the contradiction between signal transmission performance and mechanical stability.
Solution Approach 2:
The supporting structure acts as an intermediary element between the bonding pad and the low-k dielectric layers. It provides mechanical support during the bonding process, distributing and absorbing mechanical loads to protect the fragile low-k dielectric material while allowing the low-k material to function for signal transmission.
2Strength
If supporting structures are formed under the entire bonding pad, then mechanical protection is maximized, but device complexity and manufacturing steps increase
Solution Approach 1:
The supporting structure is formed only under partial regions of the bonding pad, specifically in interconnect sections where mechanical support is most needed. This localized approach provides sufficient mechanical protection while reducing the overall complexity and manufacturing effort compared to forming supporting structures under the entire bonding pad.
Solution Approach 2:
Instead of providing full coverage support under the entire bonding pad, the patent applies partial support only in critical areas. This partial action is sufficient to prevent damage to the low-k dielectric layers during bonding while avoiding the unnecessary complexity of complete coverage.
3Strength
If supporting structures are formed under the bonding pad, then mechanical loads are better distributed, but functional interconnects in non-supported regions may be compromised
Solution Approach 1:
The supporting structure is segmented into multiple supporting substructures arranged in a grid pattern, with functional interconnects positioned between them. This segmentation allows mechanical support in critical areas while leaving pathways for functional interconnects to pass through non-supported regions, maintaining both load distribution and interconnect reliability.
Solution Approach 2:
Different regions of the bonding pad are treated differently: some regions have supporting structures for mechanical protection, while other regions remain free for functional interconnects. This local differentiation ensures that mechanical loads are distributed where needed without compromising the reliability of functional interconnects.
Data Source
AI summary
One or more embodiments are related to a semiconductor component comprising a supporting structure arranged in a first layer sequence, a second layer arranged above the first layer sequence, and a bonding pad. The layer sequence may comprise a plurality of layers of a dielectric and the bonding pad is arranged above the second layer. The supporting structure may comprise a plurality of supporting substructures and is formed under partial regions of the bonding pad.