Semiconductor Surface Etching Using In-Situ Fluorine-Nitrogen Reaction
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Solution Overview
Problem
Existing semiconductor manufacturing processes face inefficiencies in etching substrate surfaces, leading to reduced productivity.
Innovation Solution
A method involving the use of a nitrogen-containing object to chemically react with a fluorine-containing substance within a process container, producing a substance X that efficiently etches the substrate surface, followed by film formation and substrate separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching methods are used to etch substrate surfaces, then the etching process can be completed, but the productivity is reduced due to inefficient etching rates and longer processing times
Solution Approach 1:
The patent introduces a nitrogen-containing object as an intermediary substance that reacts with fluorine-containing gas to generate substance X in-situ within the process container. This mediator approach allows the etching process to proceed more efficiently by producing the active etching agent directly at the reaction site, thereby improving etching efficiency and reducing processing time without requiring complex external delivery systems
Solution Approach 2:
The nitrogen-containing object is prepared and disposed in the process container before the fluorine-containing gas is introduced. This preliminary placement ensures that when the fluorine-containing gas is supplied, the chemical reaction can immediately proceed to generate substance X, eliminating preparation time and enabling rapid initiation of the etching process, thus reducing overall processing time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances etching efficiency and productivity by using a controlled chemical reaction to remove oxides from substrate surfaces, allowing for high etching rates and reduced processing time between steps.
Implementation Method 1
causing the nitrogen-containing object to chemically react with the fluorine-containing substance
Implementation Method 2
etching a surface of the product substrate by using a substance X produced by supplying a fluorine-containing substance into the process container
Data Source
AI summary
A technique includes: (a) providing a state where a product substrate and a nitrogen-containing object are disposed in a process container; and (b) etching a surface of the product substrate by using a substance X produced by supplying a fluorine-containing substance into the process container in which the product substrate and the nitrogen-containing object are disposed and causing the nitrogen-containing object to chemically react with the fluorine-containing substance.