Semiconductor Integrated Circuit Surge Protection

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Solution Overview

Problem

Semiconductor integrated circuits used for battery control face damage from surge voltages applied between input terminals, as existing protection mechanisms are inadequate in preventing electrostatic damage to circuit devices.

Innovation Solution

The semiconductor integrated circuit incorporates a network of MOS transistors in diode connection and protection diode circuits between terminals to divert surge currents, protecting circuit devices from overvoltage and electrostatic damage by creating dedicated surge current paths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a single protection circuit is shared among multiple input terminals, then the circuit size is reduced, but the protection effectiveness against surge voltage between neighboring terminals is insufficient

Engineering Contradiction:

Improvecircuit sizeVSAvoidprotection effectiveness

Core Design Contradiction:

Area of stationary objectVSReliability

Solution Approach 1:

The protection circuit is segmented into multiple independent units, with each unit dedicated to protecting a specific circuit device between neighboring terminals. This segmentation allows each protection unit to independently respond to surge voltages between its associated terminals, ensuring effective protection while maintaining a compact overall structure through the modular arrangement of these segmented protection units.

Inventive Principle:

Principle #1Segmentation

2Adaptability or versatility

If switching devices are connected between neighboring input terminals to discharge battery electricity, then the battery voltage control function is improved, but the circuit devices become vulnerable to electrostatic damage from surge voltage

Engineering Contradiction:

Improvebattery voltage control functionVSAvoidelectrostatic damage risk

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

A protection circuit unit is introduced as an intermediary component between the switching device and the neighboring input terminals. This intermediary protection unit provides a dedicated surge current path that diverts electrostatic discharge away from the switching device, allowing the switching device to perform its battery discharge function while being protected from harmful surge voltages.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Device complexity

If no dedicated protection circuit is provided between neighboring terminals, then the circuit complexity is reduced, but the circuit devices cannot be protected from overvoltage

Engineering Contradiction:

Improvecircuit complexityVSAvoidovervoltage protection

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

Dedicated protection circuit units are provided at specific locations between neighboring terminals where circuit devices are connected, rather than using a uniform protection scheme throughout the circuit. This local quality approach places protection exactly where needed (between terminals with switching devices) while avoiding unnecessary protection in other areas, thus maintaining acceptable circuit complexity while ensuring reliable overvoltage protection for vulnerable components.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces the risk of electrostatic damage to internal circuits by quickly dissipating surge voltages through designated paths, ensuring the integrity of MOS transistors and battery voltage control circuits during voltage imbalances and surge events.

Implementation Method 1

The semiconductor integrated circuit incorporates a network of MOS transistors in diode connection and protection diode circuits between terminals to divert surge currents

Methodology Applied

Scientific EffectConduction (electrical): Conduction (electrical)

Implementation Method 2

The solution effectively reduces the risk of electrostatic damage to internal circuits by quickly dissipating surge voltages through designated paths

Methodology Applied

Scientific EffectJoule Heating: Joule Heating

Data Source

PatentUS9136717B2Semiconductor integrated circuit

Publication Date: 2015.09.15 SEMICON COMPONENTS IND LLC

AI summary

A circuit device connected between a neighboring pair of terminals in a semiconductor integrated circuit is protected from electrostatic damage due to a surge voltage when the surge voltage is applied between the neighboring pair of terminals. The semiconductor integrated circuit is formed to include terminals P0-P14, MOS transistors MN0-MN15 in diode connection, protection diode circuits HD0-HD14, MOS transistors T1-T14 for discharging electricity from batteries, a battery voltage detection control circuit and a clamp circuit for overvoltage protection. Each of the MOS transistors T1-T14 for discharging electricity from the batteries is connected between each neighboring pair of the terminals P0-P14 through wirings. Each of the MOS transistors MN1-MN14 in diode connection is connected between each neighboring pair of the terminals.