Semiconductor Surge Protection Circuit with Low Breakdown Voltage
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Solution Overview
Problem
Traditional surge protection circuits in semiconductor devices require high breakdown voltage, leading to increased circuit size and area, as they rely on diodes to divert surge current, which limits their effectiveness and efficiency.
Innovation Solution
A semiconductor device design incorporating a protection circuit with PMOS and NMOS transistors, resistors, capacitors, and diodes that operates at a lower voltage, allowing for reduced breakdown voltage and overall circuit area, while preventing gate oxide damage through reverse diode connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diode is used in the protection circuit to divert surge current, then surge protection is provided, but the breakdown voltage must be high which increases the circuit area
Solution Approach 1:
The protection circuit is segmented into multiple functional blocks: a surge detection unit that detects voltage surges, a control unit that generates control signals based on detection results, and a switching unit that disconnects the load during surges. This segmentation allows each component to be optimized independently, reducing overall circuit area while maintaining protection capability.
Solution Approach 2:
The invention changes the operating parameters of the protection circuit by using low breakdown voltage diodes (e.g., 5.6V) combined with voltage division resistors and control transistors. This parameter change allows the circuit to achieve effective surge protection at lower voltages, significantly reducing the required circuit area compared to traditional high breakdown voltage diode designs.
2Reliability
If the breakdown voltage is increased to improve protection, then the protection circuit operates more effectively, but the size of the entire circuit increases
Solution Approach 1:
The invention introduces intermediary components including voltage division resistors, control transistors, and coupling capacitors that mediate between the surge detection and the switching action. These intermediaries enable the use of low breakdown voltage diodes while still providing effective protection against high voltage surges, thereby reducing circuit size without compromising protection effectiveness.
Solution Approach 2:
The invention replaces the traditional mechanical/electrical breakdown mechanism of high voltage diodes with an electronic control system using transistors and resistors. This substitution allows for more flexible and compact circuit design, as the protection action is controlled electronically rather than relying on the physical breakdown characteristics of high voltage components.
3Area of stationary object
If a simple diode protection circuit is used, then the circuit is compact, but it cannot provide effective protection without high breakdown voltage which increases area
Solution Approach 1:
The protection circuit is designed with multi-functionality: the same circuit components serve both normal operation and surge protection functions. The switching unit can rapidly transition between conducting and blocking states, and the control unit can adapt to different surge conditions. This universality allows effective protection without requiring separate high breakdown voltage components, maintaining compactness.
Solution Approach 2:
The invention introduces dynamic response capability through the use of transistors and capacitors that can rapidly switch states in response to surge conditions. The control unit dynamically adjusts the protection mechanism based on real-time voltage detection, allowing the compact circuit to provide adaptive protection that was previously only achievable with larger, static high breakdown voltage designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective surge protection at lower voltages, reducing the overall circuit area and preventing gate oxide damage, thus enhancing the protection efficiency and compactness of semiconductor devices.
Implementation Method 1
a first diode connected in between the gate and the source of the first transistor; a second diode connected in between the gate and the source of the second transistor
Implementation Method 2
a capacitor connected in between the other end of the first resistor and a second supply terminal
Implementation Method 3
a first transistor having a source connected to the first supply terminal, and a gate connected to a connection point between the first resistor and the capacitor; a second transistor having a drain connected to the first supply terminal and a source connected to the second supply terminal
Data Source
AI summary
A semiconductor device for protecting loads from power surges includes a first resistor having a first end connected to a first supply terminal, a capacitor connected to a second end of the first resistor and a second supply terminal. There is a first transistor with a source connected to the first supply terminal and a gate connected to a point between the first resistor and the capacitor. A second resistor is connected between the drain of the first transistor and the second supply terminal, and a first diode is connected between the gate and the source of the first transistor. A second transistor has a drain connected to the first supply terminal, a source connected to the second supply terminal, and a gate connected to the drain of the first transistor. There is a second diode connected between the gate and the source of the second transistor.