Semiconductor Surge Protection Circuit Design
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Solution Overview
Problem
Conventional semiconductor devices face challenges in reliability and miniaturization due to the inability to connect a surge protection circuit to a pad that requires high voltage, and they often require multiple external input terminals for generating negative voltages during testing.
Innovation Solution
A semiconductor device design that includes a power supply circuit with a voltage conversion circuit and switch circuits to manage voltage levels, allowing for reliable operation and miniaturization by enabling the connection of a surge protection circuit to a pad that can handle high voltages and using a single external terminal for voltage supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a surge protection circuit is connected to a pad that requires high voltage for memory cell testing, then reliability is improved, but the read voltage cannot exceed the clamping voltage and thus cannot supply sufficient voltage to the memory cell
Solution Approach 1:
The pad voltage supply path is segmented into two separate paths: one path goes through the surge protection circuit for general voltage supply, and another path bypasses the surge protection circuit specifically for high voltage memory cell testing. This segmentation allows each path to serve its specific function without interference.
Solution Approach 2:
A switch circuit is introduced as an intermediary component that selectively connects the pad to different internal circuits. The switch circuit mediates between the surge protection requirements and the high voltage testing requirements, routing voltage appropriately based on the operational mode.
2Adaptability or versatility
If multiple external input terminals are used to generate negative voltage for test mode, then voltage generation capability is improved, but device size increases
Solution Approach 1:
A single external input terminal is designed to serve multiple functions: it can supply positive voltage for normal operation, and by combining it with internally generated voltages through the voltage conversion circuit, it can also generate negative voltage for test mode. This multi-functionality eliminates the need for separate terminals for different voltage requirements.
Solution Approach 2:
The voltage conversion circuit changes the voltage parameter (polarity and magnitude) of the input voltage to generate the required negative voltage for test mode. By converting the single input voltage into multiple voltage forms internally, the system achieves versatile voltage generation without requiring multiple external terminals.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances reliability by allowing high voltage supply to memory cells while minimizing device size by using a single external terminal for voltage measurement, thereby overcoming the limitations of conventional devices.
Implementation Method 1
a surge protection circuit clamping at a predetermined voltage value a voltage supplied to the external terminal
Implementation Method 2
a voltage conversion circuit changing the magnitude of a voltage received from the first switch circuit
Data Source
AI summary
A semiconductor device includes a memory cell to and from which data is written and read in accordance with voltage supplied, a power supply circuit generating the voltage supplied to the memory cell, a microcomputer, an external terminal, a surge protection circuit clamping at a predetermined voltage value a voltage supplied to the external terminal, and a first switch circuit switching to output to one of the power supply circuit and the microcomputer a voltage having passed through the surge protection circuit. The power supply circuit includes a voltage conversion circuit changing the magnitude of a voltage received from the first switch circuit, and a second switch circuit switching to supply the memory cell with one of the voltage received from the first switch circuit and the voltage changed in magnitude.