Semiconductor Switch Control Device Malfunction Detection
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Solution Overview
Problem
The existing semiconductor switch control devices for electric and hybrid electric vehicles tend to increase in size due to the complexity of malfunction detection circuits, which affects the reliability and efficiency of high-voltage systems.
Innovation Solution
A semiconductor switch control device is designed with a redundant configuration of bidirectional shutoff circuits, including multiple FETs connected in parallel, a resistor for voltage detection, and a controller to determine malfunctions based on detected voltages, allowing for efficient identification of ON/OFF-state malfunctions without increasing device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a malfunction detection circuit is added to detect semiconductor switch malfunction, then system reliability is improved, but device size increases
Solution Approach 1:
The patent combines multiple malfunction detection functions into a single integrated circuit that monitors both semiconductor switches simultaneously. The circuit integrates voltage detection, current detection, and malfunction determination logic into one compact unit, eliminating the need for separate detection circuits for each switch while maintaining comprehensive monitoring capability.
Solution Approach 2:
The malfunction detection circuit is designed with universal functionality to monitor multiple semiconductor switches using a unified detection mechanism. The same voltage detection circuit and determination logic can detect malfunctions in different switches by monitoring their respective voltages, making the circuit multi-functional rather than requiring dedicated circuits for each switch.
2Measurement precision
If multiple detection circuits are used for each semiconductor switch, then detection precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the detection functions for multiple semiconductor switches into a single integrated circuit. The voltage detection circuit measures voltages at multiple points, and the determination logic processes these measurements to detect malfunctions in either switch, eliminating the need for separate detection circuits while maintaining detection precision.
Solution Approach 2:
The patent introduces an intermediary resistor connected between the semiconductor switches, which serves as a shared sensing element for detecting voltage differences. This intermediary component enables a single detection circuit to monitor both switches by measuring the voltage across the resistor, reducing circuit complexity while preserving detection capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables reliable malfunction detection and prevention in high-voltage systems, improving the reliability and efficiency of electric vehicle power systems by reducing the size of the control device and minimizing energy loss, while maintaining system reliability through fail-safe processing.
Implementation Method 1
a resistor R that detects a voltage of the semiconductor switch module 10, a first voltage detector 30 that detects a voltage applied to the resistor R
Data Source
AI summary
A semiconductor switch control device includes a bidirectional shutoff circuit that transmits or shuts off a current flowing bidirectionally between a high-voltage battery and a high-voltage load, a resistor that detects a voltage of the bidirectional shutoff circuit, a first voltage detector that detects a voltage applied to the resistor, and a controller configured to determine malfunction of the bidirectional shutoff circuit, based on a first detected voltage detected by the first voltage detector. The bidirectional shutoff circuit includes a first FET and a second FET including respective source terminals connected in series, and a third FET and a fourth FET including respective source terminals connected in series. The resistor includes one end connected between the source terminals of the first FET and the second FET, and the other end connected between the source terminals of the third FET and the fourth FET.