Topological Semiconductor Switch Switchover for Active Short-Circuit Heat
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Solution Overview
Problem
Existing power electronics systems in motor vehicles face challenges in managing fault cases, particularly in reduced semiconductor areas where thermal loading is high during active short circuits, leading to potential overheating and reduced semiconductor lifespan.
Innovation Solution
A method for driving topological semiconductor switches by splitting them into groups and implementing immediate or temperature-dependent switchover between power semiconductors, along with soft turnoff mechanisms to prevent overvoltages, utilizing different semiconductor materials and types like SiC-MOSFET and Si-IGBT, to optimize energy distribution and reduce thermal loading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single power semiconductor is used in a topological semiconductor switch, then the device structure is simple, but the thermal loading during active short circuits causes high temperature and reduced lifespan
Solution Approach 1:
The topological semiconductor switch is divided into at least two groups of power semiconductors instead of using a single power semiconductor. Each group can be independently controlled and switched, allowing the thermal load during active short circuits to be distributed across multiple devices rather than concentrated on one device, thereby reducing the maximum temperature of individual semiconductors
Solution Approach 2:
The control unit implements periodic or alternating switching between different groups of power semiconductors during active short circuit conditions. By switching between groups in a periodic manner, the thermal stress is distributed over time, preventing any single semiconductor from experiencing continuous high thermal loading and reducing peak temperatures
2Area of stationary object
If the semiconductor area is reduced to minimize package size, then the power module becomes more compact, but fault cases become more critical due to limited heat dissipation capacity
Solution Approach 1:
By segmenting the power semiconductor functionality across multiple devices grouped in at least two groups, the patent distributes the current and thermal load. During fault cases, this segmentation allows for better heat dissipation across the total semiconductor area, preventing any single device from being overwhelmed by excessive thermal stress
Solution Approach 2:
The control unit dynamically changes operating parameters by switching between different groups of power semiconductors based on detected conditions. During active short circuits, the control unit can activate different groups with appropriate gate resistances to optimize current distribution and thermal management, thereby improving reliability in fault cases
3Temperature
If immediate switchover between power semiconductors is implemented during active short circuits, then the maximum temperature is reduced, but voltage spikes and overvoltages may occur
Solution Approach 1:
The control unit is designed to anticipate potential voltage spikes during switchover events and applies cushioning measures in advance. By detecting the onset of active short circuits and preparing switchover sequences that account for voltage transients, the system prevents harmful voltage spikes before they occur, while still achieving the temperature reduction benefits of group switching
Data Source
AI summary
A method for driving a topological semiconductor switch for a power electronics system, wherein the topological semiconductor switch is split into at least two groups of power semiconductors, wherein, when an active short circuit is identified, switchover from the power semiconductor which conducts the short circuit first to the other power semiconductor takes place.