Semiconductor Switch Device Sinker Regions Leakage Current
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Solution Overview
Problem
Semiconductor switch devices for RF signals face challenges in minimizing leakage currents while maintaining performance metrics such as on-state resistance and off-state capacitance, particularly in high-frequency applications where power losses and internal capacitances are critical.
Innovation Solution
Incorporating sinker regions of a second conductivity type, connectable to an external potential, to draw minority carriers away from the source and drain regions, thereby reducing leakage currents without degrading the device's figure-of-merit or increasing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If sinker regions are added to reduce leakage current, then leakage current is reduced, but device complexity increases
Solution Approach 1:
The device is segmented by adding discrete sinker regions (first sinker region and second sinker region) that are spatially separated and independently configured. Each sinker region targets specific leakage paths from source and drain regions, dividing the leakage reduction function into localized segments rather than using a single complex structure.
Solution Approach 2:
The sinker regions act as intermediary elements between the source/drain regions and the substrate. These intermediate structures provide a controlled path for minority carriers, mediating the interaction between the active device regions and the substrate to reduce leakage without requiring direct modification of the source-drain junctions.
2Object-generated harmful factors
If sinker regions are added to reduce leakage current, then leakage current is reduced, but manufacturing processes become more complex
Solution Approach 1:
The formation of sinker regions is merged with existing manufacturing steps. The first and second sinker regions are formed using the same ion implantation or doping processes that create the source and drain regions, combining multiple functions into unified process steps rather than requiring separate dedicated manufacturing operations.
Solution Approach 2:
The sinker regions serve multiple functions: they reduce leakage current through minority carrier extraction, provide substrate biasing capabilities, and can be formed using standard doping processes already present in the manufacturing flow. This multi-functionality reduces the need for additional specialized manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sinker regions effectively mitigate leakage currents at junctions, enhancing the device's performance without compromising on-state resistance and off-state capacitance, thus improving overall efficiency in high-frequency applications.
Implementation Method 1
each sinker region is connectable to an external potential for drawing minority carriers away from the source and drain regions to reduce a leakage current at junctions between the source and drain regions and the first semiconductor region
Data Source
AI summary
A semiconductor switch device for switching an RF signal and a method of making the same. The device includes a first semiconductor region having a first conductivity type. The device also includes a source region and a drain region located in the first semiconductor region. The source region and the drain region have a second conductivity type. The second conductivity type is different to the first conductivity type. The device further includes a gate separating the source region from the drain region. The device also includes at least one sinker region having the second conductivity type. Each sinker region is connectable to an external potential for drawing minority carriers away from the source and drain regions to reduce a leakage current at junctions between the source and drain regions and the first semiconductor region.