Multi-Electrode Semiconductor Switching Loss Reduction
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Solution Overview
Problem
Current power control semiconductor devices face challenges in reducing on-resistance and switching loss, which affect their efficiency and performance.
Innovation Solution
The semiconductor device incorporates multiple control electrodes with specific conductivity types and threshold voltages, applying controlled voltages to manage carrier inversion layers and accumulation layers, optimizing the turn-on and turn-off processes to minimize resistance and loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional power control semiconductor devices are used, then the device structure is simple, but the on-resistance and switching loss are high
Solution Approach 1:
The patent segments the gate control into multiple independent control electrodes (first control electrode, second control electrode, third control electrode) with different functions. Each control electrode independently controls carrier injection and removal at different stages, allowing optimized control of turn-on and turn-off processes to reduce switching loss while maintaining manageable device structure
Solution Approach 2:
The patent implements dynamic control of carrier density through time-varying voltages applied to different control electrodes. The first control electrode dynamically injects carriers during turn-on, while the second and third control electrodes dynamically remove carriers during turn-off, creating an optimized dynamic switching process that reduces both turn-on and turn-off losses
2Loss of energy
If conventional single-control-electrode devices are used, then the control structure is simple, but the turn-on and turn-off losses are high
Solution Approach 1:
The gate control is segmented into three distinct control electrodes with specialized functions: the first control electrode for turn-on carrier injection, the second control electrode for turn-off carrier removal, and the third control electrode for additional carrier management. This segmentation allows independent optimization of turn-on and turn-off processes, reducing total switching losses
Solution Approach 2:
The first control electrode performs preliminary action by injecting carriers into the semiconductor part before the main switching event. This pre-injection of carriers prepares the device for efficient conduction, reducing the energy loss during the actual turn-on process by ensuring adequate carrier availability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces turn-on and turn-off losses by efficiently managing carrier density and parasitic capacitances, enhancing the device's performance and efficiency.
Implementation Method 1
applying a first control voltage between the first control electrode and the first electrode, the first control voltage being a first-off voltage that is less than a first threshold voltage of the first control electrode; increasing the first control voltage from the first off-voltage to a first on-voltage
Implementation Method 2
applying a second control voltage between the second control electrode and the first electrode, the second control voltage being a second off-voltage that is less than a second threshold voltage of the second control electrode; increasing the second control voltage from the second off-voltage to a second on-voltage
Data Source
AI summary
A semiconductor device includes first and second electrodes, a semiconductor part therebetween and first to third control electrodes between the first electrode and the semiconductor part. The semiconductor part includes first and third layers of a first-conductivity-type and second and fourth layers of a second-conductivity-type. The second, third and fourth layers are provided between the first layer and the first electrode, between the second layer and the first electrode, and between the first layer and the second electrode, respectively. To the first to third control electrodes, first to third voltages greater than the threshold voltage thereof are applied at first to third timings, respectively. The third, second and first voltages are reduced to a lower level than the threshold voltage at a fourth timing after the first to third timings, at a fifth timing after the fourth timing and at a sixth timing after the fifth timing, respectively.