Semiconductor Structure Fabrication with Synchronous Array-Peripheral Etching
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Solution Overview
Problem
The existing methods for fabricating semiconductor structures require separate fabrication of mating structures in the array and peripheral regions, leading to lower production efficiency.
Innovation Solution
A method involving the formation of mask patterns and layers on both regions simultaneously, allowing for synchronous etching of the substrate to form both structures, thereby simplifying processes and improving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mating structures in the array region and peripheral region are fabricated separately, then fabrication flexibility is maintained, but production efficiency deteriorates
Solution Approach 1:
The patent merges the fabrication processes for array region structures and peripheral region structures into a single integrated process. Multiple mask layers (first mask layer, second mask layer, third mask layer) are formed and patterned simultaneously across both regions, allowing synchronous etching to create both types of structures in one production cycle, thereby dramatically improving productivity while the systematic process integration manages the complexity.
Solution Approach 2:
The patent segments the fabrication process into distinct mask layers and pattern formation steps that can be independently controlled and optimized. Each mask layer (first, second, third) serves specific functions for different structure types, allowing precise control over array and peripheral region structures while maintaining overall process integration for high efficiency.
2Loss of time
If separate fabrication processes are used for array and peripheral regions, then process control is simplified, but manufacturing time increases
Solution Approach 1:
The patent implements continuous useful action by maintaining the substrate in a single fabrication sequence where mask layers and patterns are formed continuously across both array and peripheral regions. The synchronous etching process ensures that both structure types are created in an uninterrupted manufacturing flow, eliminating idle time and repeated handling while systematic process control manages the complexity through structured mask layer sequences.
Data Source
AI summary
Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The method for fabricating a semiconductor structure provided by the embodiments of the present disclosure includes: providing a substrate including an array region and a peripheral region; forming a first mask layer covering the array region and the peripheral region on the substrate; forming a first device structure pattern on the first mask layer, and then forming a second device structure pattern on the first mask layer; and etching the substrate by using the first device structure pattern and the second device structure pattern as mask layer to form a peripheral region structure and an array region structure synchronously on the substrate. Technological processes are simplified, fabrication difficulties are reduced, and production efficiency is improved.