Semiconductor Temperature Control Circuit for DRAM Data Retention

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Solution Overview

Problem

Semiconductor devices, such as DRAM, face challenges in maintaining data retention characteristics due to temperature variations, requiring effective temperature control mechanisms that existing technologies like digital and analog temperature sensor regulators and digital temperature compensated self-refresh techniques do not adequately address.

Innovation Solution

A semiconductor device is designed with a stop signal generation circuit, temperature signal output circuit, and temperature code processing circuit to compare operation offset signals with temperature code signals, generate output temperature signals in synchronization with an operation clock, and perform arithmetic operations to control the operation clock based on temperature differences, ensuring accurate temperature management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature sensors and temperature compensated techniques are used to control operation conditions, then data retention characteristic is improved, but device complexity increases

Engineering Contradiction:
Improvedata retention characteristicVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The temperature signal output circuit automatically generates temperature-compensated clock signals without requiring external temperature sensors or complex control logic. The circuit uses its own internal temperature variations to self-adjust the clock signal frequency, eliminating the need for separate temperature sensing and compensation mechanisms.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The temperature signal output circuit serves multiple functions: it generates clock signals for memory operations, compensates for temperature effects, and provides temperature-dependent frequency adjustment all within a single integrated circuit block, reducing overall device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If temperature compensation is implemented, then data retention characteristic is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedata retention characteristicVSAvoidmanufacturing precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The circuit exploits natural temperature-induced parameter changes in semiconductor devices rather than trying to compensate for them. By designing the temperature signal output circuit to utilize these inherent variations, the patent converts a manufacturing challenge into a functional feature, reducing precision requirements.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If temperature-dependent clock signal generation is implemented, then measurement precision of temperature is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature measurement precisionVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The temperature signal output circuit uses its own internal temperature characteristics to generate the clock signal frequency, eliminating the need for separate temperature sensors and measurement circuits. The circuit self-measures and self-compensates for temperature effects.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS9627018B1Semiconductor devices and semiconductor systems including the same
Publication Date: 2017.04.18 SK HYNIX INC
  • US9627018B1 patent drawing
  • US9627018B1 patent drawing
  • US9627018B1 patent drawing

AI summary

A semiconductor device may be provided. The semiconductor device may include a stop signal generation circuit configured to compare an operation offset signal with an operation temperature code signal to generate a stop signal. The semiconductor device may include a temperature signal output circuit configured to generate an output temperature signal from a sensed temperature signal in synchronization with an operation clock signal which is generated based on the stop signal. The semiconductor4 device may include a temperature code processing circuit configured to receive a temperature difference code signal corresponding to the output temperature signal to generate the operation temperature code signal in synchronization with the operation clock signal.