Semiconductor Temperature Prediction via RC Circuit Correlation
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Solution Overview
Problem
As semiconductor devices become smaller and consume more power, they experience increased temperatures, leading to performance deterioration, which existing technologies fail to effectively predict and manage.
Innovation Solution
A temperature prediction circuit using a Foster or Cauer type RC network is employed, establishing a current-voltage correlation to predict device temperature, allowing for power adjustments to prevent critical temperature exceedance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If power supplied to semiconductor device is increased, then processing demand and performance are improved, but temperature increases causing deterioration of device performance
Solution Approach 1:
The patent applies preliminary action by predicting future temperature of the semiconductor device before it actually reaches critical levels. The temperature prediction circuit calculates anticipated temperature based on current power consumption and thermal characteristics, enabling proactive power adjustment before temperature deterioration occurs, thus maintaining both high processing demand and safe operating temperatures.
2Measurement precision
If temperature prediction is implemented using complex measurement systems, then temperature monitoring accuracy is improved, but device complexity and cost increase
Solution Approach 1:
The patent employs copying by creating an electrical RC circuit model that replicates the thermal behavior of the semiconductor device. Instead of using complex physical temperature sensors, the circuit model copies the thermal response characteristics (heat capacity and thermal resistance) in the electrical domain, providing accurate temperature prediction through simple voltage measurements across the equivalent circuit components.
Solution Approach 2:
The patent substitutes mechanical/physical temperature measurement systems with an electrical circuit-based prediction system. The thermal field is transformed into an electrical equivalent circuit where thermal mass becomes capacitance and thermal resistance becomes electrical resistance, replacing complex thermal sensing with simple electrical measurements that are easier to implement and integrate.
3Temperature
If power is reduced to prevent temperature exceedance, then device temperature is controlled, but processing performance and operational efficiency decrease
Solution Approach 1:
The patent applies dynamics by implementing real-time, adaptive power management based on predicted temperature. Rather than using static power reduction, the system dynamically adjusts power consumption levels according to the predicted thermal state and operational requirements, allowing maximum power to be used when safe and reducing power only when necessary to prevent temperature exceedance, thus optimizing both temperature control and operational efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient power management, preventing performance degradation by predicting and controlling device temperatures, thereby improving operational efficiency and stability.
Implementation Method 1
As the amount of power supplied to a semiconductor device increases, the temperature of the semiconductor device also increases
Implementation Method 2
The temperature prediction circuit may include at least one resistor and/or capacitor, and a plurality of nodes. The resistance of the resistor and/or the capacitance of the capacitor of the temperature prediction circuit may be set such that the power applied to the device and current applied to the temperature prediction circuit have a linear relation with each other
Data Source
AI summary
A method of predicting a temperature includes operatively coupling a temperature prediction circuit to a device including a semiconductor chip, determining a correlation between a current and voltage of the temperature prediction circuit, and predicting a temperature with respect to power applied to the device using the determined correlation.