Semiconductor Temperature Sensing Circuits for Dynamic Parameter Adjustment
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Solution Overview
Problem
Semiconductor devices face inefficiencies due to temperature-dependent characteristics, leading to unnecessary power consumption and reduced battery life in mobile devices, as they are designed for worst-case temperature scenarios, resulting in suboptimal performance and power wastage at typical operating temperatures.
Innovation Solution
Incorporating temperature sensing circuits with hysteresis selection capabilities, allowing for adaptive adjustment of operating parameters such as voltage and refresh frequency based on real-time temperature readings, enabling optimized performance across a range of temperatures without continuous parameter modifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor devices are designed for worst-case temperature corners to ensure specifications are met, then reliability is improved, but power consumption increases unnecessarily at typical operating temperatures
Solution Approach 1:
The patent implements dynamic parameter adjustment by introducing temperature sensing circuits that continuously monitor device temperature and automatically adjust operating parameters (such as refresh frequency in DRAM, voltage levels, and timing parameters) based on the detected temperature. This replaces the static worst-case design with a dynamic adaptation mechanism, allowing the device to operate efficiently at typical temperatures while maintaining reliability at extreme temperatures.
Solution Approach 2:
The patent changes physical operating parameters based on temperature conditions. Specifically, it adjusts refresh frequency, voltage levels, and timing parameters according to the detected temperature range. This allows the device to use lower refresh frequencies and optimized voltage levels at typical operating temperatures, reducing power consumption while maintaining specification compliance when temperature extremes occur.
2Reliability
If refresh frequency is increased to meet high temperature specifications, then reliability is improved, but power consumption increases at low temperatures where it is unnecessary
Solution Approach 1:
The patent dynamically adjusts refresh frequency based on real-time temperature monitoring. At low temperatures where charge degradation is slow, the refresh frequency is reduced to minimize power consumption. At high temperatures where charge degradation accelerates, the refresh frequency is increased to maintain data integrity. This dynamic adjustment eliminates the need to operate at maximum refresh frequency continuously.
Solution Approach 2:
The temperature sensing circuits enable the device to self-adjust its operating parameters based on its own thermal state. The system automatically monitors its temperature and adjusts refresh operations accordingly, eliminating the need for external control or conservative fixed-parameter design.
3Reliability
If internal regulated power supply voltages are designed for worst-case corners, then reliability is improved, but power consumption increases at typical operating temperatures
Solution Approach 1:
The patent implements dynamic voltage regulation by adjusting internal power supply voltages based on detected temperature conditions. At typical operating temperatures, voltages are optimized for lower power consumption. At extreme temperature corners, voltages are adjusted to ensure circuit performance meets specifications. This replaces fixed worst-case voltage design with adaptive voltage control.
Data Source
AI summary
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.