Semiconductor Temperature Sensing Circuits for Dynamic Power Optimization
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Solution Overview
Problem
Semiconductor devices face inefficiencies due to temperature-dependent characteristics, leading to unnecessary power consumption and reduced battery life in mobile devices, as they are often designed for worst-case temperature scenarios, resulting in suboptimal performance at typical operating temperatures.
Innovation Solution
Incorporating temperature sensing circuits with hysteresis selection capabilities, allowing for adaptive adjustment of operating parameters such as voltage and refresh frequency based on actual temperature, using temperature-independent reference voltages and variable resistors to optimize performance across a range of temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor devices are designed for worst-case temperature corners to ensure specifications are met, then reliability is improved, but power consumption increases unnecessarily at typical operating temperatures
Solution Approach 1:
The patent implements dynamic adjustment of operating parameters based on actual temperature conditions. Temperature sensing circuits continuously monitor device temperature, and control logic dynamically modifies refresh frequency, voltage levels, and timing parameters to match actual operating conditions rather than relying on static worst-case design margins.
Solution Approach 2:
The patent changes multiple operating parameters based on temperature measurements including refresh interval timing, power supply voltage levels, and circuit timing constants. By adjusting these parameters dynamically according to actual temperature, the system maintains reliability while avoiding the excessive power consumption inherent in fixed worst-case designs.
2Reliability
If refresh operation frequency is increased to meet high-temperature specifications, then reliability is improved, but power consumption increases at low temperatures where it is unnecessary
Solution Approach 1:
The refresh operation frequency is dynamically adjusted based on real-time temperature sensing. At low temperatures where charge degradation is slow, the refresh frequency is reduced below the worst-case maximum. At high temperatures where charge degradation accelerates, the refresh frequency increases to maintain data retention specifications, thereby optimizing power consumption across the temperature range.
Solution Approach 2:
The patent implements periodic temperature monitoring and conditional refresh operations. Rather than continuous maximum-frequency refreshing, the system periodically checks temperature conditions and adjusts refresh timing accordingly, enabling low-power operation during extended periods at favorable temperatures while maintaining reliability when conditions deteriorate.
3Reliability
If voltage levels are maintained high to ensure performance at high temperature, then reliability is improved, but power consumption increases unnecessarily at low temperature
Solution Approach 1:
The patent dynamically adjusts power supply voltage levels based on temperature measurements. At low temperatures where device performance naturally improves, voltage levels are reduced to minimize power consumption. At high temperatures where performance degrades, voltage levels are increased to maintain circuit operation within specifications, thus avoiding unnecessary power consumption while preserving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption and extends battery life by optimizing semiconductor device performance at typical operating temperatures, minimizing unnecessary parameter changes and maintaining efficiency across varying temperatures.
Implementation Method 1
a plurality of temperature sensing circuits may respectively receive a reference voltage and may provide temperature indication signals
Implementation Method 2
Each hysteresis circuit may receive a temperature indication signal and a hysteresis setting signal and may provide a hysteresis temperature output
Data Source
AI summary
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.