Semiconductor Temperature Sensor with Pre-Calibration Data Storage
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Solution Overview
Problem
Existing semiconductor devices require increased test processes to accurately correct temperature characteristics, leading to higher costs and limitations in measuring temperature and power supply voltage with high accuracy.
Innovation Solution
A semiconductor device with a temperature sensor module that outputs non-linear digital values and substantially linear sensor voltage values, combined with a storage unit and controller to calculate characteristic formulas, allowing for accurate temperature and power supply voltage measurement by storing and processing data at specific temperature points before and after mounting on a printed board.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of test processes is increased to correct temperature characteristics with high accuracy, then measurement precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies preliminary action by measuring and storing temperature characteristics data during the wafer fabrication process before the semiconductor device is completed and mounted. This allows correction data to be prepared in advance, eliminating the need for extensive post-manufacturing test processes and reducing manufacturing costs while maintaining high measurement precision.
Solution Approach 2:
The patent implements beforehand cushioning by pre-measuring temperature characteristics at multiple temperature points during wafer fabrication and storing these data points. This preparatory measurement creates a data foundation that cushions against the need for additional costly post-manufacturing tests, enabling accurate temperature compensation without increasing manufacturing complexity.
2Manufacturing precision
If the number of test processes is increased to correct temperature characteristics, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent performs temperature characteristic measurements and corrections during the wafer fabrication process itself, before the device is completed and packaged. This preliminary action integrates the correction process into existing manufacturing flows, avoiding the need for complex separate test processes and reducing overall device complexity while improving manufacturing precision.
Solution Approach 2:
The patent enables the semiconductor device to self-correct its temperature characteristics by using internally stored correction data that was measured during fabrication. The device uses its own pre-acquired data to perform compensation calculations, eliminating the need for external complex test equipment and processes, thereby reducing device complexity while maintaining high correction accuracy.
3Measurement precision
If correction data is measured after mounting on printed board, then measurement precision is improved, but loss of time increases
Solution Approach 1:
The patent measures and stores temperature characteristic data during wafer fabrication before the device is mounted on the printed board. This preliminary measurement eliminates the need for time-consuming post-mounting calibration processes, reducing loss of time while maintaining the ability to achieve high measurement precision using the pre-acquired correction data.
Data Source
AI summary
According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.