Semiconductor Temperature Sensor Voltage Signal Adjustment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices, such as DRAM, face challenges in maintaining data retention characteristics due to temperature variations, requiring effective temperature sensing and adjustment mechanisms to reduce power consumption and improve reliability.
Innovation Solution
A semiconductor system comprising a controller and a semiconductor device with a temperature sensor, code generator, register, and output buffer, which adjusts the level variation and voltage variation rate of a temperature voltage signal based on a mode set signal, generating a temperature code signal by comparing it with a reference voltage signal to compensate for temperature changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If temperature sensors are used to detect temperature variations and adjust operation cycle time, then power consumption is reduced in self-refresh mode, but the reliability of temperature variation information deteriorates due to temperature differences between controller and semiconductor device
Solution Approach 1:
A temperature compensation circuit is introduced as an intermediary component within the semiconductor device that generates a compensation signal based on internal temperature sensor readings. This compensation signal is then applied to the refresh counter to adjust the refresh cycle timing, effectively mediating between the temperature detection function and the refresh operation to eliminate the reliability issue caused by temperature differences between controller and device
Solution Approach 2:
The patent implements a feedback mechanism where the temperature sensor continuously monitors internal temperature, the compensation circuit processes this information to generate adjustment signals, and the refresh counter applies these adjustments to the refresh timing. This closed-loop feedback system ensures that refresh operations are continuously adapted to actual device temperature conditions, maintaining reliability while enabling power savings
2Reliability
If refresh cycle time is adjusted based on circumferential temperature variations, then data retention characteristics are maintained, but device complexity increases due to additional temperature sensing and adjustment mechanisms
Solution Approach 1:
The patent merges the temperature compensation function with the existing refresh control logic by integrating a compensation circuit that works in conjunction with the refresh counter. Instead of adding a completely separate temperature control system, the compensation mechanism is combined with the refresh timing generation, sharing common components such as the temperature sensor and control logic to minimize additional complexity while maintaining data retention characteristics
Solution Approach 2:
The temperature sensor and compensation circuit are designed to serve multiple functions: they not only adjust refresh timing for data retention but also provide temperature information for other device operations. The compensation signal generated can be applied to various timing-critical operations beyond just refresh cycles, making the added complexity beneficial for multiple device functions
Data Source
AI summary
A semiconductor system includes a controller and a semiconductor device. The controller receives a temperature code signal and responsively generates a mode set signal operable to adjust a level variation and a voltage variation rate of a temperature voltage signal, wherein the temperature voltage signal level varies according to temperature when a logic level combination of the temperature code signal is different from a predefined logic level combination. The semiconductor device generates the temperature voltage signal from a drivability and a resistance value set by the mode set signal. The semiconductor device generates the temperature code signal based on a comparison of the temperature voltage signal and a reference voltage signal.