Semiconductor Temperature Monitoring Using Current-Voltage Lookup
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Solution Overview
Problem
Existing semiconductor monitoring techniques are limited in timing and accuracy, particularly during start-up, due to reliance on specific collector currents and the small effective area of temperature sense diodes, which restrict continuous temperature monitoring.
Innovation Solution
A semiconductor apparatus with a current detection circuit, voltage detection circuit, and a temperature calculation device using a table of device temperatures corresponding to various collector currents and voltages, allowing for continuous temperature monitoring without the need for additional temperature detection devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sense diode is mounted on a semiconductor device for temperature monitoring, then temperature measurement capability is provided, but the effective area for collector current is reduced
Solution Approach 1:
The patent uses collector voltage as an intermediary parameter to indirectly determine temperature. Instead of directly measuring temperature with a sense diode that would occupy space, the system measures collector voltage under constant collector current conditions and uses the temperature characteristic of this voltage to infer temperature, thus avoiding the need for additional physical components on the semiconductor device
Solution Approach 2:
The patent replaces the physical temperature sense diode (mechanical/component-based approach) with an electrical measurement approach using collector voltage characteristics. This substitution eliminates the need for additional physical components while maintaining temperature monitoring capability through electrical parameter measurement and calculation
2Device complexity
If temperature monitoring is performed only at a specific collector current point as in PTL 1, then the monitoring method is simple, but continuous temperature monitoring at all operating conditions is not achieved
Solution Approach 1:
The patent segments the temperature monitoring approach by dividing it into multiple discrete collector current points. Temperature characteristics are measured and stored for several specific collector current values, and during operation, the system determines temperature based on the closest matching current point, enabling continuous monitoring across varying operating conditions while maintaining practical implementation complexity
Solution Approach 2:
The patent performs preliminary temperature characteristic measurements at multiple collector current points and stores this data in advance. This preliminary action creates a reference database that enables rapid temperature determination during actual operation without requiring real-time complex calculations, thus achieving continuous monitoring capability while keeping the operational system relatively simple
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables continuous, accurate temperature monitoring of semiconductor devices, preventing overheating and extending their operational lifespan by allowing real-time temperature feedback and control.
Implementation Method 1
a technique of calculating the temperature from the temperature characteristic of a collector voltage when constant collector current is applied has been proposed
Data Source
AI summary
A current detection circuit (4) detects a device current flowing in the semiconductor device (1). A voltage detection circuit (5) detects a device voltage applied to the semiconductor device (1). A temperature calculation device (6) has a table collecting device temperatures of the semiconductor device (1) respectively corresponding to plural collector currents and plural collector voltages, and reads out a device temperature corresponding to the device current detected by the current detection circuit (4) and the device voltage detected by the voltage detection circuit (5) from the table.