Semiconductor Module Terminal Bonding for Power Cycle Tolerance
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Solution Overview
Problem
Conventional bonding methods for semiconductor modules, such as ultrasonic welding followed by laser welding, can lead to connection failures due to stress, resulting in reduced power cycle tolerance and potential electrical characteristic defects.
Innovation Solution
The semiconductor module employs a combination of ultrasonic and laser-welded sections in the connection terminals, where the laser-welded sections are strategically positioned to provide additional stress tolerance and prevent interfacial fractures, while the ultrasonic bonding ensures strong initial attachment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If ultrasonic welding followed by laser welding is used for bonding connection terminals, then strong initial attachment is achieved, but connection failures occur due to stress resulting in reduced power cycle tolerance
Solution Approach 1:
The bonding process is segmented into two distinct stages: ultrasonic welding for initial attachment and laser welding for stress-resistant bonding. This segmentation allows each process to optimize for its specific function, preventing the stress-related connection failures that occur when using a single bonding method
Solution Approach 2:
Ultrasonic welding is performed as a preliminary action to temporarily attach the connection terminal to the semiconductor device. This preliminary bonding positions the components correctly and provides initial mechanical support before the final laser welding process is applied
2Ease of manufacture
If conventional single-bonding methods are used, then manufacturing process is simple, but interfacial fractures occur reducing module reliability
Solution Approach 1:
Two different welding technologies (ultrasonic and laser welding) are merged into a single bonding sequence. The combination leverages the advantages of both methods: ultrasonic welding provides precise initial positioning while laser welding delivers strong, stress-resistant final bonding, thereby preventing interfacial fractures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This dual-bonding approach enhances the power cycle tolerance of the semiconductor module by reducing the likelihood of connection failures and interfacial fractures, thereby improving the module's reliability and durability.
Implementation Method 1
a first bonding process for temporarily fitting a first member to a second member at bonding sites by ultrasonic welding
Implementation Method 2
a second bonding process for laser-welding, after the first bonding process, the first member to the second member by irradiating the bonding sites with laser light
Data Source
AI summary
Provided is a semiconductor module including: a layered substrate on which a semiconductor chip is provided; and a connection terminal including a connection portion connected to the layered substrate, wherein the connection portion includes at least one ultrasonic connection section, and at least one laser-welded section, at least a portion of which is provided at a location other than a location at which the ultrasonic connection section is provided. The at least one ultrasonic connection section may be provided to be closer to the leading end of the connection portion than the at least one laser-welded section is.