Semiconductor Terminal Structure for Lower-Heat Bonding
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Solution Overview
Problem
Conventional semiconductor devices experience reduced lifespan due to localized heat generation at bonding portions when high currents are applied, as the bonding area between the circuit pattern and terminal is insufficient, leading to increased current density.
Innovation Solution
The semiconductor device incorporates a terminal with a rectangular electrode bonding portion, upright main wiring, and protruding sub wiring portions that increase the bonding area with the circuit pattern, utilizing a bonding material to enhance the bonding strength and area, and includes a groove in the electrode bonding portion to improve bonding material distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the bonding area between the terminal and circuit pattern is increased, then the current density and heat generation are reduced, but the terminal structure becomes more complex
Solution Approach 1:
The terminal is divided into multiple wiring portions (main wiring portion and sub wiring portions) that are bonded to different regions of the circuit pattern. This segmentation increases the total bonding area by distributing the bonding across multiple locations rather than relying on a single large bonding region, thereby reducing current density without requiring a single complex large-area structure.
Solution Approach 2:
The terminal structure extends in multiple spatial dimensions by having sub wiring portions that protrude below the electrode bonding portion and are bonded to lower portions of the circuit pattern. This three-dimensional configuration increases the bonding area by utilizing vertical space, allowing the terminal to connect to circuit patterns at different height levels without increasing the horizontal footprint.
2Area of stationary object
If triangular bent portions are provided at the electrode end to increase bonding area, then the bonding surface increases, but the increase is insufficient to suppress heat generation
Solution Approach 1:
Instead of relying on a single electrode bonding portion with bent extensions, the invention segments the bonding into multiple distinct portions: a main wiring portion and multiple sub wiring portions. Each portion bonds to a separate region of the circuit pattern, collectively creating a much larger effective bonding area that can adequately dissipate heat generated during high current operation.
Solution Approach 2:
The sub wiring portions extend below the electrode bonding portion in the vertical dimension and bond to lower portions of the circuit pattern. This three-dimensional bonding approach significantly increases the total bonding area compared to conventional two-dimensional bent portions, providing sufficient heat dissipation capacity while maintaining a compact horizontal profile.
Data Source
AI summary
A semiconductor device includes a circuit substrate having a circuit pattern and a terminal. The terminal includes an electrode bonding portion, a main wiring portion, and a pair of sub wiring portions. The lower surface of the electrode bonding portion is bonded to the circuit pattern with a bonding material. The main wiring portion is provided upright with a side of the electrode bonding portion. The pair of sub wiring portions extending from the both ends of the main wiring portion in the width direction along sides adjacent to a side of the electrode bonding portion. The lower end portions of the pair of sub wiring portions protrude below the lower surface of the electrode bonding portion. The lower end portions of the pair of sub wiring portions are bonded to the circuit pattern together with the lower surface of the electrode bonding portion by the bonding material.