Semiconductor Terminal Structure With Thicker Outer Lead for Heat Dissipation

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Solution Overview

Problem

Existing semiconductor manufacturing apparatuses face limitations in reducing terminal temperature due to restrictions on terminal thickness, which hinders effective heat management during current flow.

Innovation Solution

The apparatus employs a design where the second terminal, outside the sealing material, has a greater thickness than the first terminal, allowing for increased heat radiation and efficient heat management by adjusting the cross-sectional area of the terminals, and using materials like copper and laser welding for joining.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the width of the terminal is changed to suppress temperature, then the terminal temperature is reduced, but the terminal thickness is restricted and cannot be optimized

Engineering Contradiction:
Improveterminal temperatureVSAvoidterminal thickness optimization
Core Design Contradiction:
TemperatureVSAdaptability or versatility

Solution Approach 1:

The invention changes the geometric parameters of the terminal by making the second terminal thicker than the first terminal in the thickness direction. This parameter change allows the terminal to have greater heat radiation area without increasing the width, thereby suppressing terminal temperature while maintaining design flexibility in the thickness direction.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention transitions from optimizing terminal dimensions only in the width direction to utilizing the thickness direction for heat radiation optimization. By increasing the thickness of the second terminal, the invention creates additional thermal management capability in a new dimension, allowing temperature suppression without width increases.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Temperature

If the terminal thickness is increased to enhance heat radiation, then the heat radiation area is increased, but the terminal structure becomes more complex

Engineering Contradiction:
Improveheat radiation capabilityVSAvoidterminal structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The invention divides the terminal structure into two distinct segments: the first terminal with a certain thickness and the second terminal with a greater thickness. This segmentation allows each terminal to have optimized dimensions for its specific function, with the second terminal providing enhanced heat radiation capability without requiring the entire terminal structure to be complex.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention applies different thickness qualities to different parts of the terminal structure. The second terminal has a greater thickness specifically at the portion extending from the sealing material to provide localized heat radiation enhancement, while other portions maintain appropriate thickness for their functions, avoiding unnecessary overall structural complexity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively suppresses temperature rise by enhancing heat radiation and reducing thermal resistance, improving the efficiency and reliability of the semiconductor manufacturing apparatus.

Implementation Method 1

allowing for increased heat radiation and efficient heat management by adjusting the cross-sectional area of the terminals

Methodology Applied
Scientific EffectHeat radiation: Thermal Radiation

Implementation Method 2

reducing thermal resistance

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS20240258134A1Semiconductor manufacturing apparatus and method for manufacturing a semiconductor manufacturing apparatus
Publication Date: 2024.08.01 MITSUBISHI ELECTRIC CORP
  • US20240258134A1 patent drawing
  • US20240258134A1 patent drawing
  • US20240258134A1 patent drawing

AI summary

A semiconductor manufacturing apparatus of the present disclosure includes a semiconductor module having a semiconductor device, a sealing material adapted to seal the semiconductor module, and a second terminal to be arranged outside the sealing material. The semiconductor module includes a first terminal electrically connected to the semiconductor device and extending to the outside of the sealing material. The first terminal is joined to the second terminal outside the sealing material. The thickness of the second terminal in a direction perpendicular to a joined face of the first terminal and the second terminal is defined as the thickness of the second terminal. The thickness of the first terminal at a portion extending from the sealing material in the direction perpendicular to the joined face is defined as the thickness of the first terminal. The thickness of the second terminal is greater than the thickness of the first terminal.