Semiconductor Module Terminal Insulation at PN Corner Edges

The patent applies beforehand cushioning by providing an insulating structure that extends beyond the standard insulation distance at corners and edges of PN terminals. This insulating sheet or resin structure is designed in advance to cover potential unwanted edges that may occur during manufacturing, creating a buffer zone that prevents insulation failure even when manufacturing precision is not perfect.

The patent implements local quality by providing enhanced insulation specifically at corner portions and edge regions of PN terminals where unwanted edges are most likely to occur. Instead of uniformly increasing insulation distance everywhere, the insulating structure is strategically concentrated at high-risk locations, optimizing both reliability and space utilization.

The patent applies local quality by concentrating enhanced insulation only at corner portions and edge regions of PN terminals where unwanted edges are most likely to occur. This localized approach provides the necessary insulation reliability without uniformly increasing the overall device area, thus resolving the contradiction between reliability and compactness.

The patent uses another dimension by extending insulation in the vertical direction (thickness direction) at corner portions rather than only increasing the horizontal insulation distance. The insulating sheet or resin structure protrudes toward the other terminal from the corner, providing additional insulation coverage in three-dimensional space without significantly increasing the planar footprint of the device.