Semiconductor Package Terminal Layout for Heat Dissipation and PCB Mounting
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving efficient heat dissipation and mounting flexibility, particularly in power conversion applications, due to limitations in terminal design and layout compatibility with printed circuit boards.
Innovation Solution
The semiconductor device incorporates a half-etched lead frame structure for the source and gate terminals, allowing for increased chip size and layout freedom, with the drain terminal exposed on both the front and back surfaces for improved heat dissipation and dual mounting capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the drain terminal is exposed on both front and back surfaces, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The drain terminal is divided into two separate exposed portions: a first exposed portion on the front surface and a second exposed portion on the back surface. This segmentation allows heat to be dissipated through multiple surfaces simultaneously, improving thermal management while maintaining a manageable structural complexity by using distinct terminal segments rather than a single complex terminal design.
2Adaptability or versatility
If half-etched lead frame structure is used, then mounting versatility is improved, but manufacturing precision requirements increase
Solution Approach 1:
The lead frame structure employs a half-etched design where the etching depth varies across different regions. The etching depth is controlled to be between 50-90% of the lead frame thickness, creating a dynamic gradient structure that provides both mechanical flexibility for versatile mounting and defined geometric constraints that guide manufacturing precision requirements.
3Adaptability or versatility
If chip size is increased, then layout freedom is improved, but device area increases
Solution Approach 1:
The patent utilizes the third dimension (vertical depth) by exposing the drain terminal on both the front and back surfaces of the package. This dimensional approach allows the chip area to be increased for better layout freedom while the overall device footprint is managed by extending terminal exposure vertically through the package thickness rather than solely horizontally.
Data Source
AI summary
According to an embodiment, a semiconductor device includes a semiconductor chip having a first surface on which a source electrode and a gate electrode are provided and a second surface that is opposed to the first sur face and on which a drain electrode is provided, a source terminal having a fourth surface exposed from a third surface of a package and a fifth surface coupled to the source electrode and having a shape different from a sha pe of the fourth surface, a gate terminal having a sixth surface exposed from the third surface of the package and a seventh surface coupled to the gate electrode and having a shape different from a shape of the sixth surface, and a drain terminal coupled to the drain electrode and having an eighth surface exposed from the third surface of the package.