Semiconductor Module Terminal Layout for Low Inductance Insulation
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Solution Overview
Problem
Conventional semiconductor devices face challenges in reducing inductance at the connections between positive and negative electrode terminals of a semiconductor module and a capacitor, while maintaining adequate insulation distance, leading to increased switching loss and potential breakdown risks.
Innovation Solution
A semiconductor device design featuring a first terminal with a concave insulating paper notch and extended portions, where the terminal is partially covered by insulating paper, allowing for increased cross-sectional area without compromising insulation distance, achieved by using a laminated structure with specific width configurations and insulating papers to reduce mutual inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the cross-sectional area of terminals is increased to reduce inductance, then inductance is reduced, but insulation distance is compromised
Solution Approach 1:
The insulating paper is segmented by forming a notch that divides it into multiple regions. This segmentation allows the insulating paper to conform to the terminal structure while maintaining insulation distance. The notch creates a stepped configuration where the insulating paper provides adequate clearance even when terminals have large cross-sectional areas for reduced inductance.
Solution Approach 2:
The insulating paper has different widths at different locations, creating a stepped or terraced structure. The wider portions provide insulation where needed, while the notch creates localized variations in insulation thickness. This local quality variation allows the structure to maintain adequate insulation distance while accommodating large terminal cross-sections for low inductance.
2Reliability
If insulating paper width is increased to maintain insulation distance, then insulation distance is ensured, but terminal cross-sectional area is reduced
Solution Approach 1:
The solution moves from a single-dimensional insulating paper width to a multi-dimensional stepped structure with notches. By creating vertical terraces through the notch, the insulating paper provides insulation distance in multiple spatial dimensions, allowing adequate clearance without requiring uniform increases in paper width that would constrain terminal size.
Solution Approach 2:
The insulating paper with notch creates a nested or stepped structure where wider portions are positioned at different heights or locations. This nesting allows the insulating paper to provide adequate insulation distance while leaving space for large terminal cross-sections, effectively solving the contradiction between insulation requirements and terminal size.
Data Source
AI summary
A semiconductor module includes a first case having a first side face, a first insulating paper disposed on the first case and having a first width in a first direction and having a notch with a second width smaller than the first width, a first terminal between the first case and the first insulating paper, having an exposed portion exposed from the first insulating paper at an area where the notch is formed, and a second terminal on the first insulating paper at a side opposite to a side where the first terminal is disposed. The first terminal and the first insulating paper have extended portions extending to an outside of the first case from the first side face so that a portion of the first insulating paper where the notch is formed and the exposed portion of the first terminal are located at the outside of the first case.