Power Semiconductor Terminal Insulation to Suppress Partial Discharge
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Solution Overview
Problem
Existing power semiconductor devices face the risk of partial discharge due to voids between main terminals and sealing resins or water vapor entering through the sealing resin, which can lead to dielectric breakdown, especially during high-temperature operations.
Innovation Solution
A power semiconductor device configuration where a plate-shaped main terminal is entirely covered with a second insulating material of higher hardness than the first gel-like insulating material, preventing void formation and water vapor accumulation, thereby suppressing partial discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gel-like first insulating material is used to seal the semiconductor element, then the sealing effect is improved, but voids form between the main terminal and sealing resin leading to partial discharge
Solution Approach 1:
The patent uses a composite sealing structure with two different insulating materials: a gel-like first insulating material for primary sealing and a second insulating material with higher hardness for covering the main terminal. This composite approach combines the advantages of both materials to prevent void formation and partial discharge while maintaining effective sealing.
Solution Approach 2:
The patent applies different insulating materials to different regions: the gel-like first insulating material is used for sealing the semiconductor element, while a harder second insulating material is specifically applied to cover the main terminal. This local differentiation addresses the specific requirements of each region to prevent partial discharge.
2Reliability
If water vapor enters through the sealing resin, then insulation reliability deteriorates, but preventing this requires additional protective measures
Solution Approach 1:
The dual-layer insulating material structure provides enhanced protection against water vapor penetration. The harder second insulating material covering the main terminal creates an additional barrier that prevents water vapor from reaching critical areas, thereby maintaining insulation reliability without requiring complex external protective measures.
Data Source
AI summary
Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.