Semiconductor Terminal Bonding Structure for Self-Alignment
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Solution Overview
Problem
The misalignment of the drain terminal with the die pad in semiconductor devices, particularly in larger terminals, reduces the bonding area and the current handling capacity of the device.
Innovation Solution
A semiconductor device configuration that includes a conductive layer with engagement portions and a terminal bonding layer, where the terminal bonding portion overlaps and is self-aligned with the engagement portion, using a bonding layer that reacts to misalignment forces to ensure proper positioning, and a sealing resin to prevent delamination and improve heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the drain terminal size is increased to handle larger current, then the current handling capacity is improved, but the misalignment with the die pad increases reducing the bonding area
Solution Approach 1:
The bonding layer is designed to automatically self-align the drain terminal with the die pad through its material properties and bonding mechanism, eliminating the need for external alignment adjustments. The bonding layer compensates for misalignment forces and maintains optimal bonding area regardless of terminal size, allowing larger terminals to handle more current without suffering from alignment degradation
2Area of stationary object
If the drain terminal is made larger to increase bonding area, then the bonding area is improved, but the misalignment degree increases reducing effective bonding
Solution Approach 1:
The bonding layer acts as a feedback mechanism that detects and compensates for misalignment between the drain terminal and die pad. Through its viscoelastic properties and bonding force distribution, the bonding layer automatically adjusts to maintain optimal contact area, creating a self-correcting system that maintains high bonding effectiveness even with larger terminals
3Device complexity
If conventional bonding methods are used without self-alignment mechanism, then the device structure is simple, but the bonding area is reduced due to misalignment
Solution Approach 1:
The bonding layer is designed with self-aligning properties that automatically compensate for misalignment without requiring complex external alignment mechanisms or additional processing steps. This self-service capability maintains large bonding area while keeping the overall device structure relatively simple, as the alignment function is integrated into the bonding layer itself rather than requiring separate alignment systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The self-alignment mechanism reduces terminal misalignment, maintains a strong bonding area, and enhances heat dissipation, improving the semiconductor device's current handling capacity and thermal performance.
Implementation Method 1
the terminal bonding portion overlaps and is self-aligned with the engagement portion, using a bonding layer that reacts to misalignment forces to ensure proper positioning
Implementation Method 2
a sealing resin to prevent delamination and improve heat dissipation
Data Source
AI summary
A semiconductor device includes: a conductive layer including a mounting surface; a first semiconductor element bonded to the mounting surface; a first terminal electrically connected to the first semiconductor element; and a first bonding layer electrically bonding the conductive layer and the first terminal. The conductive layer includes a first end surface, and a first peripheral surface located inward of the conductive layer from the first end surface as viewed in a first direction. The conductive layer includes a first engagement portion defined by the first peripheral surface. The first terminal includes a first bonding portion electrically bonded to the first engagement portion via the first bonding layer. As viewed in the first direction, the first bonding portion overlaps with the first engagement portion.